Infrared and Raman spectra of N-implanted GaAs - Zavetova, M.; Akimchenko, I.P.; Dymova, N.N.; Kamba, S. (Elsevier)
Changes of the properties of semiconducting GaAs crystals by N-implantation (under different implantation and annealing conditions) studied by IR (localized vibrational modes, absorption edge tails) and Raman spectroscopies are reported. Broad LVM at ~ 470 cm^-^1 was observed in agreement with (refs. 1,2). Band at 582.5 cm^-^1 was found on samples implanted with high current density (10 μA cm^-^2). Nitrogen, incorporated most probably into the As-vacancy, in doses 〉=10^1^6 cm^-^2 orders the network.
http://linkinghub.elsevier.com/retrieve/pii/0022-2860(90)80037-K
Keywords: V; U