Quantum-chemical approach to the elementary steps of plasma etching - Fricke, D.K.; Muller, H.; Opitz, C. (Elsevier)
We derive for the first time a mechanism of reactive plasma etching in the system Si/F by the quantum-chemical approach. SiF"2-like species at the surface play an important role. SiF"3 surface complexes also occur. The final etching product SiF"4 is formed with high probability in the gas phase.
http://linkinghub.elsevier.com/retrieve/pii/0009-2614(83)80759-3
Keywords: V; U