Multiwell laser heterostructures fabricated by liquid-phase epitaxy
Leshko, A. Yu. ; Lyutetskii, A. V. ; Murashova, A. V. ; Pikhtin, N. A. ; Tarasov, I. S. ; Arsent’ev, I. N. ; Ber, B. Ya. ; Kudryavtsev, Yu. A. ; Il’in, Yu. V. ; Fetisova, N. V.
Springer
Published 1998
Springer
Published 1998
| ISSN: |
1090-6533
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|---|---|
| Source: |
Springer Online Journal Archives 1860-2000
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| Topics: |
Physics
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| Notes: |
Abstract A methodology has been developed for growing InGaAsP/InP multiwell laser heterostructures by liquid-phase epitaxy. Depth profiling using a secondary ion mass spectrometer was used to investigate the distribution profiles of the composition of multiwell laser heterostructures. Liquid-phase epitaxy was used to fabricate InGaAsP/InP multiwell laser heterostructures with active regions having emission wavelengths of 1.3 and 1.55 μm and their radiative characteristics were studied.
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| Type of Medium: |
Electronic Resource
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| URL: |