Properties of wide-mesastripe InGaAsP/InP lasers
Golikova, E. G. ; Kureshov, V. A. ; Leshko, A. Yu. ; Lyutetskii, A. V. ; Pikhtin, N. A. ; Ryaboshtan, Yu. A. ; Skrynnikov, G. A. ; Tarasov, I. S. ; Alferov, Zh. I.
Springer
Published 2000
Springer
Published 2000
| ISSN: |
1063-7826
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|---|---|
| Source: |
Springer Online Journal Archives 1860-2000
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| Topics: |
Electrical Engineering, Measurement and Control Technology
Physics
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| Notes: |
Abstract Wide-mesastripe InGaAsP/InP heterostructure lasers emitting at 1.3–1.5 µm were grown by metal-organic chemical vapor deposition (MOCVD). Radiation-power-current and spectral characteristics of the lasers have been studied in pulsed and continuous wave (cw) operation in the temperature range of 10–60°C. The temperature of the active region of the diode laser is higher by 30–60°C than that of the copper heatsink upon saturation of the cw output power. The temperature dependence of the differential quantum efficiency strongly affects the cw output power. Output powers of 3 and 2.6 W are achieved in mesastripe lasers in cw operation, and 9 and 6.5 W in pulsed operation, at wavelengths of 1.3 and 1.5 µm, respectively.
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| Type of Medium: |
Electronic Resource
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| URL: |