Temperature dependence of residual stress in epitaxial GaAs/Si(100) films determined from photoreflectance spectroscopy data
Kuz’menko, R. V. ; Ganzha, A. V. ; Bochurova, O. V. ; Domashevskaya, É. P. ; Schreiber, J. ; Hildebrandt, S. ; Mo, S. ; Peiner, E. ; Schlachetzki, A.
Springer
Published 2000
Springer
Published 2000
| ISSN: |
1063-7826
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| Source: |
Springer Online Journal Archives 1860-2000
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| Topics: |
Electrical Engineering, Measurement and Control Technology
Physics
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| Notes: |
Abstract In the temperature range T=10–300 K, photoreflectance spectroscopy was used to study the temperature dependence of residual stress in epitaxial n-GaAs films (1–5 µm thick, electron concentration of 1016–1017 cm−3) grown on Si(100) substrates. A qualitative analysis showed that the photoreflectance spectra measured in the energy region of the E 0 transition in GaAs had two components. They consisted of the electromodulation component caused by the valence subband |3/2; ±1/2〉-conduction band transition and the low-energy excitonic component. The magnitude of stress was determined from the value of the strain-induced energy shift of the fundamental transition from the subband |3/2; ±1/2〉 with respect to the band gap of the unstressed material E 0(T)-E 0 |3/2; ±1/2〉 (T). The increase in the energy shift E 0-E 0 |3/2; ±1/2〉 from 22 ± 3 meV at 296 K to 29 ± 3 meV at 10 K, which was found in the experiments, gives evidence of an increase in biaxial stress with decreasing temperature.
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| Type of Medium: |
Electronic Resource
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| URL: |