APA (7th ed.) Citation

Skrypnik, É. A., Blagodarov, A. N., Kunin, V. Y., Kochnev, I. V., Zhuravov, V. D., & Bulan'kov, N. I. (1981). Electrical properties of Al-SiO2Si structure with plasmochemical insulator: Potential barrier heights and electron capture in SiO2. Springer.

Chicago Style (17th ed.) Citation

Skrypnik, É. A., A. N. Blagodarov, V. Ya Kunin, I. V. Kochnev, V. D. Zhuravov, and N. I. Bulan'kov. Electrical Properties of Al-SiO2Si Structure with Plasmochemical Insulator: Potential Barrier Heights and Electron Capture in SiO2. Springer, 1981.

MLA (9th ed.) Citation

Skrypnik, É. A., et al. Electrical Properties of Al-SiO2Si Structure with Plasmochemical Insulator: Potential Barrier Heights and Electron Capture in SiO2. Springer, 1981.