Metal-insulator-semiconductor light modulators utilizing the Franz-Keldysh effect in gallium arsenide
Blagodarov, A. N. ; Zhuravov, V. D. ; Kochnev, I. V. ; Kunin, V. Ya. ; Morozov, S. F. ; Rodionov, A. V. ; Fomichev, V. I.
Springer
Published 1980
Springer
Published 1980
| ISSN: |
1573-9228
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|---|---|
| Source: |
Springer Online Journal Archives 1860-2000
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| Topics: |
Physics
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| Notes: |
Abstract A study was made of the electroabsorption kinetics, as well as of the spectral and field dependences of the contrast and efficiency of modulation of light in Al-SiO2-GaAs-n+-GaP structures near the fundamental absorption edge of GaAs (875–910 nm). Values of the contrast amounting to 10–12 and the modulation efficiency of 30–40% were achieved. It was demonstrated that optical data storage was possible with the aid of an He-Ne laser. Optical memory was observed in Al-SiO2-(n-n+-GaAs structures on application of voltage pulses causing carrier accumulation; the effect was due to the capture of electrons at the SiO2-GaAs interface. The absorption edge of epitaxial GaAs films on GaP substrates had an exponential profile in the photon energy range 1.37≤hν≤1.40 eV infields 0≤E 5≤6.5·104 V/cm. An empirical relationship was obtained for the spectral and field dependences of the absorption coefficient.
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| Type of Medium: |
Electronic Resource
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| URL: |