Search Results - (Author, Cooperation:T. Thompson)

2018-03-06

American Physical Society (APS)

0556-2821

1089-4918

Physics

Formal aspects of field theory, field theory in curved space

2018-06-01

American Chemical Society (ACS)

Chemistry and Pharmacology

2018-03-23

BMJ Publishing

2044-6055

Medicine

Diagnostics, Open access, Diabetes and Endocrinology, Screening (epidemiology)

2018-05-08

Rockefeller University Press

0022-1007

1540-9538

Medicine

Innate Immunity and Inflammation, Mucosal Immunology

2018-06-16

The American Association for Cancer Research (AACR)

1078-0432

1557-3265

Medicine

2013-06-07

Nature Publishing Group (NPG)

0028-0836

1476-4687

Biology

Chemistry and Pharmacology

Medicine

Natural Sciences in General

Physics

*Alternative Splicing/genetics ; Amino Acid Motifs ; Animals ; Cell Differentiation/genetics ; Cell Line ; *Cellular Reprogramming ; DNA-Binding Proteins/chemistry/deficiency/genetics/*metabolism ; Embryonic Stem Cells/*cytology/*metabolism ; Fibroblasts/cytology/metabolism ; Forkhead Transcription Factors/metabolism ; Gene Knockdown Techniques ; HEK293 Cells ; HeLa Cells ; Humans ; Induced Pluripotent Stem Cells/cytology/metabolism ; Kinetics ; Mice ; RNA-Binding Proteins/chemistry/genetics/*metabolism ; Repressor Proteins/metabolism

0040-4039

Elsevier Journal Backfiles on ScienceDirect 1907 - 2002

Chemistry and Pharmacology

Electronic Resource

2018-02-02

The American Association for Cancer Research (AACR)

1078-0432

1557-3265

Medicine

2018-03-06

Oxford University Press

0035-8711

1365-2966

Physics

2018-06-05

BMJ Publishing

2044-6055

Medicine

Open access, Public health

2018-03-15

The American Society for Microbiology (ASM)

0022-538X

1098-5514

Medicine

2018-09-13

American Association for the Advancement of Science (AAAS)

2375-2548

Natural Sciences in General

1089-7550

AIP Digital Archive

Physics

A compensation of stress induced in silicon epitaxial films heavily doped with boron was investigated. Addition of a controlled amount of germanium during the film growth allows one to attain a desired compressive or tensile stress in the film, or its complete elimination. The data shows very good correlation with a theoretical model adapted from Herzog et al. [J. Electrochem. Soc. 131, 2969 (1984)]. A 6.45 : 1 ratio of atomic concentrations of Ge and B completely eliminates stress in these films. We determined a critical amount of strain in the films, (approximately-equal-to)2–4 μm thick, beyond which misfit dislocations are generated.

Electronic Resource

1089-7550

AIP Digital Archive

Physics

The electrical activation and carrier mobility of InP implanted with the group-IV elements at MeV energies has been studied as a function of implanted atom (C, Si, Ge, and Sn) and rapid thermal annealing temperature (500–800 °C). In addition, electrical results have been correlated with photoluminescence (PL) measurements. In general, for a dose of 5×1014/cm2 and a projected range of ∼1.0 μm, the electrical activation and carrier mobility increase then saturate with increasing annealing temperature. Similarily, PL emission intensity increases with increasing annealing temperature. At a temperature of 750 °C, the electrically active fraction increases from C, Ge, Si, to Sn, respectively, while carrier mobility and PL emission intensity decreases with increasing atomic mass. Thus, Sn exhibits the highest electrical activation yet lowest carrier mobility with little optically observable, postanneal lattice recovery.

Electronic Resource

1089-7550

AIP Digital Archive

Physics

We have performed a photoluminescence study of InP:Fe (100) substrates after implantation with carbon, silicon, germanium, tin, indium, and phosphorous ions with a projected range of 1 μm. The main part of our study concentrated on the ∼0.75 eV emission band previously reported for silicon-implanted InP. We conclude that this emission is due to a donor-acceptor pair center comprised of a group IV element and a defect. The center can be formed by silicon implantation, but other group IV elements such as germanium or tin produce an essentially identical emission. Thus this band cannot be treated as a silicon "signature''. The defect related to this center is formed during annealing of implantation damage and is enhanced by deviations in stoichiometry toward excess indium. We have also shown that a band at ∼1.19 eV can be produced by a variety of methods some of which directly involve phosphorous depletion.

Electronic Resource

1475-2743

Blackwell Publishing Journal Backfiles 1879-2005

Geosciences

Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition

Abstract. The pH of soil surface horizons in Wales ranges from 3.5 to 7.5 and is significantly higher on agricultural land than under either rough grazing, unenclosed grassland or woodland. Sufficient information exists to map broad classes of soil pH. Rough grazing and woodland sites are concentrated on soil types which are naturally very acid. In Wales, such soils are found on the main mountain ranges and show up clearly on the map of pH. Their acidity is the result of an interrelationship between soil, climate and vegetation. However, afforestation, particularly with coniferous species, appears to lower the pH of the underlying soil. There is a trend in agricultural soils towards lower pH under a moister climate.

Electronic Resource

1089-7550

AIP Digital Archive

Physics

Nonoxide tunnel barriers such as AlN are of interest for magnetic tunnel junctions to avoid the oxidation of the magnetic electrodes. We have investigated the fabrication and properties of thin AlN-based barriers for use in low resistance magnetic tunnel junctions. Electronic, magnetic and structural data of tunnel valves of the form Ta (100 Å)/PtMn (300 Å)/CoFe20 (20 Å–25 Å)/barrier/CoFe20 (10–20 Å)/NiFe16 (35–40 Å)/Ta (100 Å) are presented, where the barrier consists of AlN, AlNxOy or AlN/AlOx with total thicknesses between 8 and 15 Å. The tunnel junctions were sputter deposited and then lithographically patterned down to 2×2 μm2 devices. AlN was deposited by reactive sputtering from an Al target with 20%–35% N2 in the Ar sputter gas at room temperature, resulting in stoichiometric growth of AlNx (x=0.50±0.05), as determined by RBS. TEM analysis shows that the as-deposited AlN barrier is crystalline. For AlN barriers and AlN followed by natural O2 oxidation, we obtain tunnel magnetoresistance 〉10% with specific junction resistance Rj down to 60 Ωμm2. © 2001 American Institute of Physics.

Electronic Resource

1471-4159

Blackwell Publishing Journal Backfiles 1879-2005

Medicine

Reserpine (0.1 mg/kg/day) was administered to rats from 11 through 30 days of age. During and after administration of reserpine, concentrations of catecholamines, epinephrine and norepinephrine, in the brain were estimated. Levels of catecholamines were about 30 per cent of normal during the period of reserpine administration. Approximately 3 weeks were required for these levels to return to normal. When animals were 95-100 days of age, they were deprived of food and were trained to press a bar for food. When the rate of responding became stable, the animals were subjected to three successive extinctions at daily intervals and the increase in response rate after the onset of each extinction was determined. This extinction-induced increase in response rate was greater for previously reserpinized animals than controls during the second and third extinctions, but not the first. These findings are interpreted as a decreased ability of the animals, reserpinized during infancy, to learn to respond discriminatively during non-reinforcement (extinction). Thus, an effect of reserpine administration during infancy on a type of behaviour in the adult has been demonstrated. This occurs after the catecholamine-depleting effect of the reserpine has been fully dissipated.

Electronic Resource

1077-3118

AIP Digital Archive

Physics

This work presents a systematic study of the substrate temperature dependence for the formation of the photoluminescent W center during high energy self-ion irradiation of silicon. All previous studies of this center were for postirradiation annealing, and we show that the formation is well described by a thermally activated process involving both the release of point defects from secondary defect complexes and the rate-limited activation of the center itself. We deduce an activation energy of Ea∼0.85 eV for the growth of the W center, and discuss the relationship of this type of experiment to conventional annealing studies.

Electronic Resource

1749-6632

Blackwell Publishing Journal Backfiles 1879-2005

Natural Sciences in General

Electronic Resource