Search Results - (Author, Cooperation:R. Matson)

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  1. 1
    Staff View
    Publication Date:
    2018-01-10
    Publisher:
    Nature Publishing Group (NPG)
    Electronic ISSN:
    2158-3188
    Topics:
    Medicine
    Published by:
    http://www.nature.com/

    Latest Papers from Table of Contents or Articles in Press
  2. 2
    P. Jenniskens ; M. D. Fries ; Q. Z. Yin ; M. Zolensky ; A. N. Krot ; S. A. Sandford ; D. Sears ; R. Beauford ; D. S. Ebel ; J. M. Friedrich ; K. Nagashima ; J. Wimpenny ; A. Yamakawa ; K. Nishiizumi ; Y. Hamajima ; M. W. Caffee ; K. C. Welten ; M. Laubenstein ; A. M. Davis ; S. B. Simon ; P. R. Heck ; E. D. Young ; I. E. Kohl ; M. H. Thiemens ; M. H. Nunn ; T. Mikouchi ; K. Hagiya ; K. Ohsumi ; T. A. Cahill ; J. A. Lawton ; D. Barnes ; A. Steele ; P. Rochette ; K. L. Verosub ; J. Gattacceca ; G. Cooper ; D. P. Glavin ; A. S. Burton ; J. P. Dworkin ; J. E. Elsila ; S. Pizzarello ; R. Ogliore ; P. Schmitt-Kopplin ; M. Harir ; N. Hertkorn ; A. Verchovsky ; M. Grady ; K. Nagao ; R. Okazaki ; H. Takechi ; T. Hiroi ; K. Smith ; E. A. Silber ; P. G. Brown ; J. Albers ; D. Klotz ; M. Hankey ; R. Matson ; J. A. Fries ; R. J. Walker ; I. Puchtel ; C. T. Lee ; M. E. Erdman ; G. R. Eppich ; S. Roeske ; Z. Gabelica ; M. Lerche ; M. Nuevo ; B. Girten ; S. P. Worden
    American Association for the Advancement of Science (AAAS)
    Published 2012
    Staff View
    Publication Date:
    2012-12-22
    Publisher:
    American Association for the Advancement of Science (AAAS)
    Print ISSN:
    0036-8075
    Electronic ISSN:
    1095-9203
    Topics:
    Biology
    Chemistry and Pharmacology
    Computer Science
    Medicine
    Natural Sciences in General
    Physics
    Published by:
    http://www.aaas.org/

    Latest Papers from Table of Contents or Articles in Press
  3. 3
    Tuttle, J. R. ; Contreras, M. ; Bode, M. H. ; Niles, D. ; Albin, D. S ; Matson, R. ; Gabor, A. M. ; Tennant, A. ; Duda, A. ; Noufi, R.

    [S.l.] : American Institute of Physics (AIP)
    Published 1995
    Staff View
    ISSN:
    1089-7550
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    The formation chemistry and growth dynamics of thin-film CuInSe2 grown by physical vapor deposition have been considered along the reaction path leading from the CuxSe:CuInSe2 two-phase region to single-phase CuInSe2. The (Cu2Se)β(CuInSe2)1−β (0〈β≤1) mixed-phase precursor is created in a manner consistent with a liquid-phase assisted growth process. At substrate temperatures above 500 °C and in the presence of excess Se, the film structure is columnar through the film thickness with column diameters in the range of 2.0–5.0 μm. Films deposited on glass are described as highly oriented with nearly exclusive (112) crystalline orientation. CuInSe2:CuxSe phase separation is identified and occurs primarily normal to the substrate plane at free surfaces. Single-phase CuInSe2 is created by the conversion of the CuxSe into CuInSe2 upon exposure to In and Se activity. Noninterrupted columnar growth continues at substrate temperatures above 500 °C. The addition of In in excess of that required for conversion produces an In-rich near-surface region with a CuIn3Se5 surface chemistry. A model is developed that describes the growth process. The model provides a vision for the production of thin-film CuInSe2 in industrial scale systems. Photovoltaic devices incorporating Ga with total-area efficiencies of 14.4%–16.4% have been produced by this process and variations on this process. © 1995 American Institute of Physics.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.359362

    Articles: DFG German National Licenses
  4. 4
    Ahrenkiel, R. K. ; Matson, R. J. ; Osterwald, C. R. ; Dunlavy, D. J. ; Kazmerski, L. L.

    [S.l.] : American Institute of Physics (AIP)
    Published 1985
    Staff View
    ISSN:
    1089-7550
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    Minority-carrier diffusion has been investigated in as-grown CdZnS/CuInSe2 solar cells. Capacitance-voltage (C-V) and photoconductivity measurements are combined to determine diffusion and interface recombination processes. Diffusion lengths of about 2 μm and a small interface recombination velocity are determined from biased photoconductivity, biased spectral response, and photoluminescence studies. Photoluminescence studies also indicate that a much lower interface recombination velocity occurs at the CdZnS/CuInSe2 interface than that at a bare CuInSe2 surface.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.336108

    Articles: DFG German National Licenses
  5. 5
    Tuttle, J. R. ; Albin, D. ; Matson, R. J. ; Noufi, R.

    [S.l.] : American Institute of Physics (AIP)
    Published 1989
    Staff View
    ISSN:
    1089-7550
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    The absorption coefficient (α) and fundamental transition energies of thin-film CuInSe2 were determined by spectrophotometry in the near-infrared (NIR) and visible wavelength regions from 500 to 2000 nm for a wide range of compositions. The results suggest a relationship between the constituent specie fluxes and substrate temperature, and the resulting polycrystalline nature of the film which dominates the optical properties. Near-stoichiometric and Cu-rich films appear to crystallize in larger grain sizes in comparison with Cu-poor films, with a Cu2−δ Se secondary phase at grain boundaries and free surfaces. Correspondingly, significant variations in the absorption coefficient among different film compositions exist in the neighborhood of the band edge. At energies well above the gap, all films behave similarly with α's of (1–2)×105 cm−1 at 500 nm. Similarly, continuous dispersion curves for the index of refraction have only been derived for single phase Cu-poor material by an iterative technique. The absorption data are substantiated through spectral response simulations that accurately reproduce measured device data. The range of primary and secondary transition energies, respectively, is 0.95–1.01 and 1.17–1.22 eV. These values indicate a valence-band splitting of 0.20–0.24 eV, in good agreement with single-crystal values.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.343935

    Articles: DFG German National Licenses
  6. 6
    Staff View
    ISSN:
    0040-6090
    Source:
    Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics:
    Physics
    Type of Medium:
    Electronic Resource
    URL:
    http://linkinghub.elsevier.com/retrieve/pii/0040-6090(93)90217-D

    Articles: DFG German National Licenses
  7. 7
    Buonaquisti, A. D. ; Matson, R. J. ; Russell, P. E. ; Holloway, P. H.

    Chichester [u.a.] : Wiley-Blackwell
    Published 1984
    Staff View
    ISSN:
    0142-2421
    Keywords:
    Chemistry ; Polymer and Materials Science
    Source:
    Wiley InterScience Backfile Collection 1832-2000
    Topics:
    Physics
    Notes:
    DC planar magnetron sputtering has been used to deposit gold Schottky barrier electrical contacts on n-type GaAs. The electrical character of the contact was determined from current-voltage (I-V) and electron-beam-induced voltage (EBIV) data. These data showed that the Schottky barrier height of magnetron sputter-deposited contacts was lower than for vapor deposited contacts. The barrier-height was a function of the deposition rate for electronically isolated substrates, and was dependent upon both the surface treatment prior to contact deposition, and upon doping density and post-deposition heat treatment. These effects are discussed in terms of particle irradiation of the surface during contact deposition.
    Additional Material:
    3 Ill.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1002/sia.740060606

    Articles: DFG German National Licenses