Search Results - (Author, Cooperation:N. Lu)

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  1. 1
    T G Xu, R Shi, N Lu, J Zhang, R S Bai, Z D Yang and J Zhou
    Institute of Physics (IOP)
    Published 2018
    Staff View
    Publication Date:
    2018-04-09
    Publisher:
    Institute of Physics (IOP)
    Print ISSN:
    1757-8981
    Electronic ISSN:
    1757-899X
    Topics:
    Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Published by:
    Latest Papers from Table of Contents or Articles in Press
  2. 2
    Staff View
    Publication Date:
    2018-07-24
    Publisher:
    The American Society for Microbiology (ASM)
    Print ISSN:
    0019-9567
    Electronic ISSN:
    1098-5522
    Topics:
    Medicine
    Published by:
    Latest Papers from Table of Contents or Articles in Press
  3. 3
    Zhu, T., Scalvenzi, T., Sassoon, N., Lu, X., Gugger, M.
    The American Society for Microbiology (ASM)
    Published 2018
    Staff View
    Publication Date:
    2018-06-19
    Publisher:
    The American Society for Microbiology (ASM)
    Print ISSN:
    0099-2240
    Electronic ISSN:
    1098-5336
    Topics:
    Biology
    Published by:
    Latest Papers from Table of Contents or Articles in Press
  4. 4
    Latest Papers from Table of Contents or Articles in Press
  5. 5
    D. H. Kim ; N. Lu ; R. Ma ; Y. S. Kim ; R. H. Kim ; S. Wang ; J. Wu ; S. M. Won ; H. Tao ; A. Islam ; K. J. Yu ; T. I. Kim ; R. Chowdhury ; M. Ying ; L. Xu ; M. Li ; H. J. Chung ; H. Keum ; M. McCormick ; P. Liu ; Y. W. Zhang ; F. G. Omenetto ; Y. Huang ; T. Coleman ; J. A. Rogers
    American Association for the Advancement of Science (AAAS)
    Published 2011
    Staff View
    Publication Date:
    2011-08-13
    Publisher:
    American Association for the Advancement of Science (AAAS)
    Print ISSN:
    0036-8075
    Electronic ISSN:
    1095-9203
    Topics:
    Biology
    Chemistry and Pharmacology
    Computer Science
    Medicine
    Natural Sciences in General
    Physics
    Keywords:
    Adhesiveness ; Dermis ; Elastic Modulus ; Elastomers ; Electric Power Supplies ; Electrocardiography/instrumentation/methods ; Electrodes ; Electrodiagnosis/*instrumentation/*methods ; Electroencephalography/instrumentation/methods ; Electromyography/instrumentation/methods ; *Epidermis ; Humans ; Mechanical Phenomena ; Monitoring, Physiologic/*instrumentation/*methods ; Nanostructures ; *Semiconductors
    Published by:
    Latest Papers from Table of Contents or Articles in Press
  6. 6
  7. 7
    Latest Papers from Table of Contents or Articles in Press
  8. 8
    Y. Lu, N. Blal and A. Gravouil
    SpringerOpen
    Published 2018
    Staff View
    Publication Date:
    2018-03-05
    Publisher:
    SpringerOpen
    Electronic ISSN:
    2213-7467
    Topics:
    Computer Science
    Technology
    Published by:
    Latest Papers from Table of Contents or Articles in Press
  9. 9
    Staff View
    Publication Date:
    2018-04-14
    Publisher:
    American Physical Society (APS)
    Print ISSN:
    0031-9007
    Electronic ISSN:
    1079-7114
    Topics:
    Physics
    Keywords:
    General Physics: Statistical and Quantum Mechanics, Quantum Information, etc.
    Published by:
    Latest Papers from Table of Contents or Articles in Press
  10. 10
    Staff View
    Publication Date:
    2018-08-03
    Publisher:
    American Association for the Advancement of Science (AAAS)
    Print ISSN:
    0036-8075
    Electronic ISSN:
    1095-9203
    Topics:
    Biology
    Chemistry and Pharmacology
    Geosciences
    Computer Science
    Medicine
    Natural Sciences in General
    Physics
    Keywords:
    Ecology, Microbiology
    Published by:
    Latest Papers from Table of Contents or Articles in Press
  11. 11
    Latest Papers from Table of Contents or Articles in Press
  12. 12
    Hsu, T. M. ; Tien, Y. C. ; Lu, N. H. ; Tsai, S. P. ; Liu, D. G. ; Lee, C. P.

    [S.l.] : American Institute of Physics (AIP)
    Published 1992
    Staff View
    ISSN:
    1089-7550
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    Si-δ-doped GaAs (N2D ≈ 1011 cm−2) samples grown by molecular-beam epitaxy are investigated by using photoreflectance spectroscopy. The oscillations observed above the GaAs fundamental band gap are attributed to the Franz–Keldysh effect in the region between the δ-doped layer and the crystal surface. This ascription is confirmed by detailed studies through varying the cap thickness (250–2500 A(ring)), temperature (10–450 K), and laser pump power (0.05–7 mW/cm2). The surface potential deduced from the Franz–Keldysh oscillations is found to be temperature and laser pump power dependent, which is explained by taking the surface photovoltaic effect into account. The surface Fermi level has been measured by this method and is found to have the value 0.73±0.02 V.
    Type of Medium:
    Electronic Resource
    URL:
    Articles: DFG German National Licenses
  13. 13
    Lu, N. ; Samuels, M. E. ; Shi, L. ; Baker, S. L. ; Glover, S. H. ; Sanders, J. M.

    Oxford, UK : Blackwell Science Ltd
    Published 2004
    Staff View
    ISSN:
    1365-2214
    Source:
    Blackwell Publishing Journal Backfiles 1879-2005
    Topics:
    Medicine
    Psychology
    Notes:
    Background  The increased risk of common infectious diseases associated with child day care attendance may vary by age, health plan and parent educational level. This study determined quantitatively the risk of diarrhoeal illness and upper respiratory infection (URI) among day-care children in comparison with home-care children. It examined the extent of risks in day-care children under different conditions of three age groups, enrolled in two health plans, and from families of two levels of education.Methods  The study subjects were recruited through two health plans: a Health Maintenance Organization (HMO) and the Medicaid program in Columbia, South Carolina of the USA. The sample was collected using a household survey of children, aged 5 years or younger. The participants were contacted bimonthly for 18 months with 435 attending out-of-home day care facilities and 753 being cared for at home. The potential confounding factors of family characteristics were controlled in examining the odds ratios for day care effect on common infections in children under different conditions.Results  In general, risks of diarrhoeal illness and URI in day-care children are greater than in home-care children. Children younger than 1.5 years of age attending day care and covered by the Medicaid program are at the greatest risk. The difference in risks between day-care and home-care children, however, is reduced to an insignificant level for children older than 1.5 years of age and for children covered by the HMO health plan. Among day-care children, those who are covered by the Medicaid program are at a significantly higher risk than those who are covered by the HMO health plan.Conclusions  Although day-care children in general suffer a greater risk of common infectious diseases, the extent of day care effect on risks of diarrhoeal illness and URI varies significantly by age and type of health insurance plan.
    Type of Medium:
    Electronic Resource
    URL:
    Articles: DFG German National Licenses
  14. 14
    Lu, N. H. ; Hsu, T. M.

    [S.l.] : American Institute of Physics (AIP)
    Published 1995
    Staff View
    ISSN:
    1089-7550
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    We attempt to deal with the physical processes involved in the temperature-dependent photoreflectance of single AlGaAs/GaAs modulation-doped heterojunction structures. Building on the assumption that photomodulation mechanism is due chiefly to modification of the band bending in the buffer layer, we apply the Franz–Keldysh theory to simulate the temperature-dependent photoreflectance spectra of single AlGaAs/GaAs modulation-doped heterojunction structures. In view of the nonuniformity of the electric field within the buffer layer, the field profile of which is calculated through the application of self-consistent variational approach, the WKB method is used to approximate the effective change in the dielectric function. A comparison between the experimental and the simulated results attests the validity of our assumption. The effects of temperature on the electric-field strengths, estimated from the extrema of the Franz–Keldysh oscillations, can be accounted for by considering the temperature dependence of the Fermi level. © 1995 American Institute of Physics.
    Type of Medium:
    Electronic Resource
    URL:
    Articles: DFG German National Licenses
  15. 15
    Hsu, T. M. ; Lu, N. H. ; Tsai, S. P. ; Wu, J. R.

    [S.l.] : American Institute of Physics (AIP)
    Published 1994
    Staff View
    ISSN:
    1089-7550
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    The signals from buried layer in Si-δ-doped GaAs of different undoped cap thickness have been studied by differential photoreflectance. The first-derivative-like line shape of differential photoreflectance is attributed to the energy transitions related to the modulations of two-dimensional electron gas density. We have observed a change of line shape at low temperatures. This change of line shape is probably due to the change of potential distribution in the conduction band, which is caused by the surface Fermi-level pinning and surface photovoltaic effect.
    Type of Medium:
    Electronic Resource
    URL:
    Articles: DFG German National Licenses
  16. 16
    Hsu, T. M. ; Chen, Y. A. ; Chang, M. N. ; Lu, N. H. ; Lee, W. C.

    [S.l.] : American Institute of Physics (AIP)
    Published 1994
    Staff View
    ISSN:
    1089-7550
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    The line shape of electromodulation in uniform electric field of δ-doped GaAs has been calculated and compared with the experiments. The calculations show that the Franz–Keldysh oscillations (FKO) beats observed in experiments are contributed form the interference of heavy-hole and light-hole transitions. The calculations also show that the linear equation of extrema is a good approximation to analyze the electric field from the FKO line shape, although the equation only considers the heavy-hole transition.
    Type of Medium:
    Electronic Resource
    URL:
    Articles: DFG German National Licenses
  17. 17
    Lu, N. H.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1999
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    Both collection and excitation modes of scanning near-field optical microscopy were used to study a strained AlGaInP/Ga0.4In0.6P low power visible multiquantum-well laser diode. Collection and excitation modes provide the near-field optical propagating intensity distribution and local photoconductivity information, respectively, at the facet of laser diode. Results show highly localized spatial correlation of the laser diode structure and its optical performance at the facet. Defect level in the energy range of 60–380 meV below the conduction band in the highly n-doped (Al0.7Ga0.3)0.5In0.5P cladding layer was found by the excitation mode using the wavelengths of 543.5 and 632.8 nm. Spatially resolved near-field optical spectra of both stimulated and spontaneous emissions were acquired as well. Longitudinal modes of the stimulated emission of laser diode were observed locally. © 1999 American Institute of Physics.
    Type of Medium:
    Electronic Resource
    URL:
    Articles: DFG German National Licenses
  18. 18
    Lu, N. Q. ; Oguz, H. N. ; Prosperetti, A.

    New York, NY : American Institute of Physics (AIP)
    Published 1989
    Staff View
    ISSN:
    1089-7666
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    A simple model of a small bubble floating at the surface of a liquid before bursting is considered. The oscillations of this system are studied by means of a Lagrangian method. It is found that two fundamentally different modes exist. The surface mode has low frequency and does not change appreciably the volume of the immersed part of the bubble: As a consequence, its efficiency as a source of sound in the water is very limited. The volume mode has a much higher frequency and is a more efficient radiator in the water, although it may be hard to excite. Both modes behave as monopole sources in the air. It is therefore predicted that an oscillating floating bubble is a much more intense source of sound in the air than in the liquid. This conclusion seems to be supported by experimental observations.
    Type of Medium:
    Electronic Resource
    URL:
    Articles: DFG German National Licenses
  19. 19
    Lu, N.

    Amsterdam : Elsevier
    Staff View
    ISSN:
    0030-4018
    Source:
    Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics:
    Physics
    Type of Medium:
    Electronic Resource
    URL:
    Articles: DFG German National Licenses
  20. 20
    Lugiato, L.A. ; Lu, N. ; Scully, M.O.

    Amsterdam : Elsevier
    Staff View
    ISSN:
    0030-4018
    Source:
    Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics:
    Physics
    Type of Medium:
    Electronic Resource
    URL:
    Articles: DFG German National Licenses