Search Results - (Author, Cooperation:M. Gailhanou)

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  1. 1
    Staff View
    Publication Date:
    2018-04-18
    Publisher:
    Institute of Physics Publishing (IOP)
    Electronic ISSN:
    1748-0221
    Topics:
    Physics
    Published by:
    http://www.iop.org/

    Latest Papers from Table of Contents or Articles in Press
  2. 2
    C. R. Webster ; P. R. Mahaffy ; G. J. Flesch ; P. B. Niles ; J. H. Jones ; L. A. Leshin ; S. K. Atreya ; J. C. Stern ; L. E. Christensen ; T. Owen ; H. Franz ; R. O. Pepin ; A. Steele ; C. Achilles ; C. Agard ; J. A. Alves Verdasca ; R. Anderson ; D. Archer ; C. Armiens-Aparicio ; R. Arvidson ; E. Atlaskin ; A. Aubrey ; B. Baker ; M. Baker ; T. Balic-Zunic ; D. Baratoux ; J. Baroukh ; B. Barraclough ; K. Bean ; L. Beegle ; A. Behar ; J. Bell ; S. Bender ; M. Benna ; J. Bentz ; G. Berger ; J. Berger ; D. Berman ; D. Bish ; D. F. Blake ; J. J. Blanco Avalos ; D. Blaney ; J. Blank ; H. Blau ; L. Bleacher ; E. Boehm ; O. Botta ; S. Bottcher ; T. Boucher ; H. Bower ; N. Boyd ; B. Boynton ; E. Breves ; J. Bridges ; N. Bridges ; W. Brinckerhoff ; D. Brinza ; T. Bristow ; C. Brunet ; A. Brunner ; W. Brunner ; A. Buch ; M. Bullock ; S. Burmeister ; M. Cabane ; F. Calef ; J. Cameron ; J. Campbell ; B. Cantor ; M. Caplinger ; J. Caride Rodriguez ; M. Carmosino ; I. Carrasco Blazquez ; A. Charpentier ; S. Chipera ; D. Choi ; B. Clark ; S. Clegg ; T. Cleghorn ; E. Cloutis ; G. Cody ; P. Coll ; P. Conrad ; D. Coscia ; A. Cousin ; D. Cremers ; J. Crisp ; A. Cros ; F. Cucinotta ; C. d'Uston ; S. Davis ; M. Day ; M. de la Torre Juarez ; L. DeFlores ; D. DeLapp ; J. DeMarines ; D. DesMarais ; W. Dietrich ; R. Dingler ; C. Donny ; B. Downs ; D. Drake ; G. Dromart ; A. Dupont ; B. Duston ; J. Dworkin ; M. D. Dyar ; L. Edgar ; K. Edgett ; C. Edwards ; L. Edwards ; B. Ehlmann ; B. Ehresmann ; J. Eigenbrode ; B. Elliott ; H. Elliott ; R. Ewing ; C. Fabre ; A. Fairen ; K. Farley ; J. Farmer ; C. Fassett ; L. Favot ; D. Fay ; F. Fedosov ; J. Feldman ; S. Feldman ; M. Fisk ; M. Fitzgibbon ; M. Floyd ; L. Fluckiger ; O. Forni ; A. Fraeman ; R. Francis ; P. Francois ; C. Freissinet ; K. L. French ; J. Frydenvang ; A. Gaboriaud ; M. Gailhanou ; J. Garvin ; O. Gasnault ; C. Geffroy ; R. Gellert ; M. Genzer ; D. Glavin ; A. Godber ; F. Goesmann ; W. Goetz ; D. Golovin ; F. Gomez Gomez ; J. Gomez-Elvira ; B. Gondet ; S. Gordon ; S. Gorevan ; J. Grant ; J. Griffes ; D. Grinspoon ; J. Grotzinger ; P. Guillemot ; J. Guo ; S. Gupta ; S. Guzewich ; R. Haberle ; D. Halleaux ; B. Hallet ; V. Hamilton ; C. Hardgrove ; D. Harker ; D. Harpold ; A. M. Harri ; K. Harshman ; D. Hassler ; H. Haukka ; A. Hayes ; K. Herkenhoff ; P. Herrera ; S. Hettrich ; E. Heydari ; V. Hipkin ; T. Hoehler ; J. Hollingsworth ; J. Hudgins ; W. Huntress ; J. Hurowitz ; S. Hviid ; K. Iagnemma ; S. Indyk ; G. Israel ; R. Jackson ; S. Jacob ; B. Jakosky ; E. Jensen ; J. K. Jensen ; J. Johnson ; M. Johnson ; S. Johnstone ; A. Jones ; J. Joseph ; I. Jun ; L. Kah ; H. Kahanpaa ; M. Kahre ; N. Karpushkina ; W. Kasprzak ; J. Kauhanen ; L. Keely ; O. Kemppinen ; D. Keymeulen ; M. H. Kim ; K. Kinch ; P. King ; L. Kirkland ; G. Kocurek ; A. Koefoed ; J. Kohler ; O. Kortmann ; A. Kozyrev ; J. Krezoski ; D. Krysak ; R. Kuzmin ; J. L. Lacour ; V. Lafaille ; Y. Langevin ; N. Lanza ; J. Lasue ; S. Le Mouelic ; E. M. Lee ; Q. M. Lee ; D. Lees ; M. Lefavor ; M. Lemmon ; A. Lepinette Malvitte ; R. Leveille ; E. Lewin-Carpintier ; K. Lewis ; S. Li ; L. Lipkaman ; C. Little ; M. Litvak ; E. Lorigny ; G. Lugmair ; A. Lundberg ; E. Lyness ; M. Madsen ; J. Maki ; A. Malakhov ; C. Malespin ; M. Malin ; N. Mangold ; G. Manhes ; H. Manning ; G. Marchand ; M. Marin Jimenez ; C. Martin Garcia ; D. Martin ; M. Martin ; J. Martinez-Frias ; J. Martin-Soler ; F. J. Martin-Torres ; P. Mauchien ; S. Maurice ; A. McAdam ; E. McCartney ; T. McConnochie ; E. McCullough ; I. McEwan ; C. McKay ; S. McLennan ; S. McNair ; N. Melikechi ; P. Y. Meslin ; M. Meyer ; A. Mezzacappa ; H. Miller ; K. Miller ; R. Milliken ; D. Ming ; M. Minitti ; M. Mischna ; I. Mitrofanov ; J. Moersch ; M. Mokrousov ; A. Molina Jurado ; J. Moores ; L. Mora-Sotomayor ; J. M. Morookian ; R. Morris ; S. Morrison ; R. Mueller-Mellin ; J. P. Muller ; G. Munoz Caro ; M. Nachon ; S. Navarro Lopez ; R. Navarro-Gonzalez ; K. Nealson ; A. Nefian ; T. Nelson ; M. Newcombe ; C. Newman ; H. Newsom ; S. Nikiforov ; B. Nixon ; E. Noe Dobrea ; T. Nolan ; D. Oehler ; A. Ollila ; T. Olson ; M. A. de Pablo Hernandez ; A. Paillet ; E. Pallier ; M. Palucis ; T. Parker ; Y. Parot ; K. Patel ; M. Paton ; G. Paulsen ; A. Pavlov ; B. Pavri ; V. Peinado-Gonzalez ; L. Peret ; R. Perez ; G. Perrett ; J. Peterson ; C. Pilorget ; P. Pinet ; J. Pla-Garcia ; I. Plante ; F. Poitrasson ; J. Polkko ; R. Popa ; L. Posiolova ; A. Posner ; I. Pradler ; B. Prats ; V. Prokhorov ; S. W. Purdy ; E. Raaen ; L. Radziemski ; S. Rafkin ; M. Ramos ; E. Rampe ; F. Raulin ; M. Ravine ; G. Reitz ; N. Renno ; M. Rice ; M. Richardson ; F. Robert ; K. Robertson ; J. A. Rodriguez Manfredi ; J. J. Romeral-Planello ; S. Rowland ; D. Rubin ; M. Saccoccio ; A. Salamon ; J. Sandoval ; A. Sanin ; S. A. Sans Fuentes ; L. Saper ; P. Sarrazin ; V. Sautter ; H. Savijarvi ; J. Schieber ; M. Schmidt ; W. Schmidt ; D. Scholes ; M. Schoppers ; S. Schroder ; S. Schwenzer ; E. Sebastian Martinez ; A. Sengstacken ; R. Shterts ; K. Siebach ; T. Siili ; J. Simmonds ; J. B. Sirven ; S. Slavney ; R. Sletten ; M. Smith ; P. Sobron Sanchez ; N. Spanovich ; J. Spray ; S. Squyres ; K. Stack ; F. Stalport ; T. Stein ; N. Stewart ; S. L. Stipp ; K. Stoiber ; E. Stolper ; B. Sucharski ; R. Sullivan ; R. Summons ; D. Sumner ; V. Sun ; K. Supulver ; B. Sutter ; C. Szopa ; F. Tan ; C. Tate ; S. Teinturier ; I. ten Kate ; P. Thomas ; L. Thompson ; R. Tokar ; M. Toplis ; J. Torres Redondo ; M. Trainer ; A. Treiman ; V. Tretyakov ; R. Urqui-O'Callaghan ; J. Van Beek ; T. Van Beek ; S. VanBommel ; D. Vaniman ; A. Varenikov ; A. Vasavada ; P. Vasconcelos ; E. Vicenzi ; A. Vostrukhin ; M. Voytek ; M. Wadhwa ; J. Ward ; E. Weigle ; D. Wellington ; F. Westall ; R. C. Wiens ; M. B. Wilhelm ; A. Williams ; J. Williams ; R. Williams ; R. B. Williams ; M. Wilson ; R. Wimmer-Schweingruber ; M. Wolff ; M. Wong ; J. Wray ; M. Wu ; C. Yana ; A. Yen ; A. Yingst ; C. Zeitlin ; R. Zimdar ; M. P. Zorzano Mier
    American Association for the Advancement of Science (AAAS)
    Published 2013
    Staff View
    Publication Date:
    2013-07-23
    Publisher:
    American Association for the Advancement of Science (AAAS)
    Print ISSN:
    0036-8075
    Electronic ISSN:
    1095-9203
    Topics:
    Biology
    Chemistry and Pharmacology
    Computer Science
    Medicine
    Natural Sciences in General
    Physics
    Published by:
    http://www.aaas.org/

    Latest Papers from Table of Contents or Articles in Press
  3. 3
    Ky, Nguyen Hong ; Ganière, J. D. ; Gailhanou, M. ; Blanchard, B. ; Pavesi, L. ; Burri, G. ; Araújo, D. ; Reinhart, F. K.

    [S.l.] : American Institute of Physics (AIP)
    Published 1993
    Staff View
    ISSN:
    1089-7550
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    GaAs/AlxGa1−xAs multiple-quantum-well (MQW) structures with identical well thicknesses but with different Al contents x in the barrier (x≈0.1, 0.2, 0.45, and 1) were grown by molecular-beam epitaxy to study the impurity-induced disordering mechanism. The disordering of the structures is observed directly by transmission electron microscopy on cleaved wedges of the sample, by the secondary electron imaging mode of scanning electron microscopy, and by secondary-ion-mass spectroscopy after Zn diffusions at 575 °C during different times (1, 4, 9, and 16 h). The results show that the totally and partially disordered regions are always behind the Zn diffusion front. The partially disordered extent depends on x. As x increases, the disordering rate increases due to the increase in Zn diffusivity. The effect of high Zn concentration is investigated by photoluminescence and by Raman scattering measurements. The systematical analysis of the photoluminescence spectra of the MQW structures diffused for different times and of the photoluminescence spectra taken on different depths below the sample surface makes it possible to describe the physical processes occurring during Zn diffusion. The column-III vacancies are created at the sample surface. They diffuse into the bulk of the sample where they are filled by other defects. Using the x-ray-diffraction technique, an expansion of the lattice constant in the region behind the Zn diffusion front was observed. This is due to a supersaturation of column-III interstitials. During the incorporation of Zn into the crystal lattice, column-III interstitials are generated. These interstitials could be responsible for the enhancement of the Al-Ga interdiffusion. The important role of the electric field at the p-n junction formed by Zn diffusion is discussed. The negatively charged column-III vacancies and the positively charged column-III interstitials are confined, respectively, on the n and p sides of the p-n junction. The results give evidence for the self-interstitial mechanism of Zn diffusion-induced disordering in GaAs/AlGaAs MQW structures.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.352883

    Articles: DFG German National Licenses
  4. 4
    Gailhanou, M. ; Labourie, C. ; Liévin, J. L. ; Perales, A. ; Lambert, M. ; Poingt, F. ; Sigogne, D.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1991
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    Chemical beam epitaxy (CBE) is demonstrated here to be a suitable technique for the planarization of etched structures by selective overgrowth of InP layers. We present the fabrication of planar buried heterostructure laser diodes (PBH-LDs) with a separate confinement multiquantum well active layer grown by gas source molecular beam epitaxy and p-n InP current blocking layers grown by CBE. These lasers have been operated cw showing threshold current as low as 17 mA and maximum power up to 25 mW. We also achieved for the first time the fabrication of PBH-LD using molecular beam epitaxy techniques only.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.104519

    Articles: DFG German National Licenses
  5. 5
    Sallese, J. M. ; Carlin, J. F. ; Gailhanou, M. ; Ilegems, M.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1997
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    We report evidence of a large blue shift (up to 70 meV) in the photoluminescence spectra of InAs/InP island like quantum wells following the reduction of the InP top barrier layer thickness from 6 nm to near zero. The photoluminescence intensity only starts to decrease when the top barrier thickness falls below 1.5 nm, indicating that radiative recombinations in the islands are very efficient. These results are well understood by a model assuming a vacuum confinement energy close to 5 eV. © 1997 American Institute of Physics.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.120022

    Articles: DFG German National Licenses
  6. 6
    Stanley, R. P. ; Houdré, R. ; Oesterle, U. ; Gailhanou, M. ; Ilegems, M.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1994
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    We have grown a very high finesse microcavity using distributed Bragg reflectors of AlxGa1−xAs and AlAs. The measured Fabry–Pérot mode has a linewidth of 0.84 A(ring) at 930 nm. This implies a finesse in excess of 5500 and an effective (mirror corrected) finesse greater than 1450. Comparison with theoretical calculations for such a structure shows that (i) the growth rates are stable to 0.25% over 14 h and (ii) the internal losses are less than 1 cm−1. © 1994 American Institue of Physics.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.112877

    Articles: DFG German National Licenses
  7. 7
    Gailhanou, M.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1993
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    Semiconductor crystal miscut angles may be determined with high precision by a new method, based on the measurement of the Bragg angle shift for a highly asymmetric reflection. X-ray diffraction on a cleaved wedge has the particularity that the asymmetry is different for the cleavage plane and for the surface whose miscut angle is to be determined. Therefore, a rocking curve gives rise to two diffraction peaks. The angular difference between the two peaks is very sensitive to the miscut angle for high asymmetry of the reflection relative to the measured surface.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.110023

    Articles: DFG German National Licenses
  8. 8
    Gailhanou, M. ; Baumbach, T. ; Marti, U. ; Silva, P. C. ; Reinhart, F. K. ; Ilegems, M.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1993
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    A GaAs surface grating (period 574 nm) is analyzed by four crystal-six reflection x-ray diffraction. Two-dimensional measurements in the vicinity of the 004 GaAs reciprocal lattice point show satellites in the transverse direction related to the periodicity of the grating. A cross pattern, centered on the 004 GaAs reciprocal lattice point, is formed by these satellites. An explanation is given by a model which includes the influence of transmission through the surface pattern on the substrate diffraction.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.108606

    Articles: DFG German National Licenses
  9. 9
    Gueissaz, F. ; Gailhanou, M. ; Houdré, R. ; Ilegems, M.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1992
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    Aluminum was deposited in situ on high crystalline quality n-doped AlInAs grown by molecular beam epitaxy. The current versus voltage characteristics yielded an ideality factor better than 1.05. A barrier height of 0.55±0.01 eV was found, as determined from capacitance versus voltage and current versus temperature (I-T) measurements. The agreement between the two measurements was excellent. Furthermore, evidence is given here that inhomogeneities of the crystal matrix, as observed by four crystal-six reflection x-ray diffraction, result in anomalous I-T characteristics.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.106456

    Articles: DFG German National Licenses
  10. 10
    Mi, J. ; Warren, P. ; Letourneau, P. ; Judelewicz, M. ; Gailhanou, M. ; Dutoit, M. ; Dubois, C. ; Dupuy, J. C.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1995
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    We have produced epitaxial Si1−x−yGexCy/Si heterostructures by rapid thermal chemical vapor deposition using methylsilane SiCH6). These layers were grown in the SiH4/GeH4/SiCH6/H2 system between 550 and 600 °C at 1.5 Torr. Suitable process conditions were found that allow very efficient substitutional carbon incorporation. No carbon cross contamination was observed. Crystal quality, chemical composition, and lattice strain were deduced from Nomarski microscopy, transmission electron microscopy, Fourier transform infrared spectroscopy, secondary ion mass spectrometry, and x-ray diffraction. Defect-free alloy layers with compositions of up to 20 at.% Ge and 2.2 at. % C were produced. The lattice parameter was tailored so that the strain in these layers gradually moved from compressive to tensile. A tensile strain of up to 0.35% was achieved. © 1995 American Institute of Physics.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.114686

    Articles: DFG German National Licenses
  11. 11
    Sallese, J. M. ; Carlin, J. F. ; Gailhanou, M. ; Grunberg, P.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1995
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    We have calculated the effect of alloy interdiffusion on the one-dimensional energy confinement of (Al,Ga)As/GaAs crescent shaped quantum wire structures. We show that the energy splitting between excited states may be greatly enhanced by the interdiffusion mechanism. © 1995 American Institute of Physics.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.114319

    Articles: DFG German National Licenses
  12. 12
    Staff View
    ISSN:
    0022-0248
    Source:
    Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics:
    Chemistry and Pharmacology
    Geosciences
    Physics
    Type of Medium:
    Electronic Resource
    URL:
    http://linkinghub.elsevier.com/retrieve/pii/0022-0248(92)90414-E

    Articles: DFG German National Licenses
  13. 13
    Gailhanou, M. ; Carlin, J.F. ; Oesterle, U.

    Amsterdam : Elsevier
    Staff View
    ISSN:
    0022-0248
    Source:
    Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics:
    Chemistry and Pharmacology
    Geosciences
    Physics
    Type of Medium:
    Electronic Resource
    URL:
    http://linkinghub.elsevier.com/retrieve/pii/0022-0248(94)90514-2

    Articles: DFG German National Licenses
  14. 14
    Staff View
    ISSN:
    0022-0248
    Source:
    Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics:
    Chemistry and Pharmacology
    Geosciences
    Physics
    Type of Medium:
    Electronic Resource
    URL:
    http://linkinghub.elsevier.com/retrieve/pii/0022-0248(91)91019-7

    Articles: DFG German National Licenses
  15. 15
    Baumbach, G.T. ; Holy, V. ; Pietsch, U. ; Gailhanou, M.

    Amsterdam : Elsevier
    Staff View
    ISSN:
    0921-4526
    Source:
    Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics:
    Physics
    Type of Medium:
    Electronic Resource
    URL:
    http://linkinghub.elsevier.com/retrieve/pii/0921-4526(94)90172-4

    Articles: DFG German National Licenses
  16. 16
    Staff View
    ISSN:
    0167-9317
    Keywords:
    III-V compounds ; Semiconductor lasers ; epitaxial Bragg mirrors ; vertical cavity lasers
    Source:
    Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics:
    Electrical Engineering, Measurement and Control Technology
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1016/S0167-9317(05)80008-5

    Articles: DFG German National Licenses