Search Results - (Author, Cooperation:M. G. Thompson)
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1Latest Papers from Table of Contents or Articles in PressX. Cai ; J. Wang ; M. J. Strain ; B. Johnson-Morris ; J. Zhu ; M. Sorel ; J. L. O'Brien ; M. G. Thompson ; S. Yu
American Association for the Advancement of Science (AAAS)
Published 2012Staff ViewPublication Date: 2012-10-23Publisher: American Association for the Advancement of Science (AAAS)Print ISSN: 0036-8075Electronic ISSN: 1095-9203Topics: BiologyChemistry and PharmacologyComputer ScienceMedicineNatural Sciences in GeneralPhysicsPublished by: -
2Latest Papers from Table of Contents or Articles in PressJ. Carolan ; C. Harrold ; C. Sparrow ; E. Martin-Lopez ; N. J. Russell ; J. W. Silverstone ; P. J. Shadbolt ; N. Matsuda ; M. Oguma ; M. Itoh ; G. D. Marshall ; M. G. Thompson ; J. C. Matthews ; T. Hashimoto ; J. L. O'Brien ; A. Laing
American Association for the Advancement of Science (AAAS)
Published 2015Staff ViewPublication Date: 2015-07-15Publisher: American Association for the Advancement of Science (AAAS)Print ISSN: 0036-8075Electronic ISSN: 1095-9203Topics: BiologyChemistry and PharmacologyComputer ScienceMedicineNatural Sciences in GeneralPhysicsPublished by: -
3Latest Papers from Table of Contents or Articles in PressStaff View
Publication Date: 2012-03-23Publisher: Nature Publishing Group (NPG)Print ISSN: 0028-0836Electronic ISSN: 1476-4687Topics: BiologyChemistry and PharmacologyMedicineNatural Sciences in GeneralPhysicsKeywords: Animals ; Humans ; Models, Theoretical ; *Motion ; *Optics and Photonics ; *Photons ; *Quantum Theory ; WalkingPublished by: -
4Latest Papers from Table of Contents or Articles in PressSantagati, R., Wang, J., Gentile, A. A., Paesani, S., Wiebe, N., McClean, J. R., Morley-Short, S., Shadbolt, P. J., Bonneau, D., Silverstone, J. W., Tew, D. P., Zhou, X., OBrien, J. L., Thompson, M. G.
American Association for the Advancement of Science (AAAS)
Published 2018Staff ViewPublication Date: 2018-01-27Publisher: American Association for the Advancement of Science (AAAS)Electronic ISSN: 2375-2548Topics: Natural Sciences in GeneralPublished by: -
5Latest Papers from Table of Contents or Articles in PressChen, L., Zhou, S., Zhang, Z., Wang, Y., Bao, L., Tan, Y., Sheng, F., Song, Y., Zhang, R., Danielle Iuliano, A., Thompson, M. G., Greene, C. M., Zhang, J.
BMJ Publishing
Published 2018Staff ViewPublication Date: 2018-04-29Publisher: BMJ PublishingElectronic ISSN: 2044-6055Topics: MedicineKeywords: Open access, EpidemiologyPublished by: -
6Latest Papers from Table of Contents or Articles in PressWang, J., Paesani, S., Ding, Y., Santagati, R., Skrzypczyk, P., Salavrakos, A., Tura, J., Augusiak, R., Mancinska, L., Bacco, D., Bonneau, D., Silverstone, J. W., Gong, Q., Acin, A., Rottwitt, K., Oxenlowe, L. K., OBrien, J. L., Laing, A., Thompson, M. G.
American Association for the Advancement of Science (AAAS)
Published 2018Staff ViewPublication Date: 2018-04-20Publisher: American Association for the Advancement of Science (AAAS)Print ISSN: 0036-8075Electronic ISSN: 1095-9203Topics: BiologyChemistry and PharmacologyGeosciencesComputer ScienceMedicineNatural Sciences in GeneralPhysicsKeywords: PhysicsPublished by: -
7Articles: DFG German National LicensesWhipple, G. H. ; Thompson, M. G. ; Kulkarni, A. K.
[S.l.] : American Institute of Physics (AIP)
Published 1988Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: TaSi2/GaAs Schottky contacts were fabricated, capped with SiO2, and annealed in flowing N2 at temperatures ranging from 400 to 900 °C. The electrical characteristics of the contacts were investigated through the use of current-voltage (I-V) and capacitance-voltage (C-V) techniques. The structure of the TaSi2/GaAs interface was studied by Auger electron spectroscopy. After annealing at temperatures up to 600 °C the electrical characteristics of the contacts improved. Degradation of the electrical characteristics was observed after annealing at temperatures above 600 °C. Some correlation was observed between the electrical characteristics and the structure of the GaAs/TaSi2 interface. The degradation is believed to be related to increased amounts of carbon and oxygen at the interface and an increased amount of oxygen in the TaSi2 film.Type of Medium: Electronic ResourceURL: