Search Results - (Author, Cooperation:J. Cui)
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1Latest Papers from Table of Contents or Articles in PressStaff View
Publication Date: 2018-03-06Publisher: Oxford University PressPrint ISSN: 0265-0754Electronic ISSN: 1471-6887Topics: MathematicsPublished by: -
2Latest Papers from Table of Contents or Articles in PressQ.-P. Ding, W. R. Meier, J. Cui, M. Xu, A. E. Böhmer, S. L. Bud’ko, P. C. Canfield, and Y. Furukawa
American Physical Society (APS)
Published 2018Staff ViewPublication Date: 2018-09-27Publisher: American Physical Society (APS)Print ISSN: 0031-9007Electronic ISSN: 1079-7114Topics: PhysicsKeywords: Condensed Matter: Electronic Properties, etc.Published by: -
3Latest Papers from Table of Contents or Articles in PressZhang, F., Xiao, S., Kendall, B., Romaniello, S. J., Cui, H., Meyer, M., Gilleaudeau, G. J., Kaufman, A. J., Anbar, A. D.
American Association for the Advancement of Science (AAAS)
Published 2018Staff ViewPublication Date: 2018-06-21Publisher: American Association for the Advancement of Science (AAAS)Electronic ISSN: 2375-2548Topics: Natural Sciences in GeneralPublished by: -
4Latest Papers from Table of Contents or Articles in PressLi, Y., Liew, Y. J., Cui, G., Cziesielski, M. J., Zahran, N., Michell, C. T., Voolstra, C. R., Aranda, M.
American Association for the Advancement of Science (AAAS)
Published 2018Staff ViewPublication Date: 2018-08-16Publisher: American Association for the Advancement of Science (AAAS)Electronic ISSN: 2375-2548Topics: Natural Sciences in GeneralPublished by: -
5Latest Papers from Table of Contents or Articles in PressXie, J., Wang, J., Lee, H. R., Yan, K., Li, Y., Shi, F., Huang, W., Pei, A., Chen, G., Subbaraman, R., Christensen, J., Cui, Y.
American Association for the Advancement of Science (AAAS)
Published 2018Staff ViewPublication Date: 2018-07-28Publisher: American Association for the Advancement of Science (AAAS)Electronic ISSN: 2375-2548Topics: Natural Sciences in GeneralPublished by: -
6Latest Papers from Table of Contents or Articles in PressG. Zhang ; C. Li ; Q. Li ; B. Li ; D. M. Larkin ; C. Lee ; J. F. Storz ; A. Antunes ; M. J. Greenwold ; R. W. Meredith ; A. Odeen ; J. Cui ; Q. Zhou ; L. Xu ; H. Pan ; Z. Wang ; L. Jin ; P. Zhang ; H. Hu ; W. Yang ; J. Hu ; J. Xiao ; Z. Yang ; Y. Liu ; Q. Xie ; H. Yu ; J. Lian ; P. Wen ; F. Zhang ; H. Li ; Y. Zeng ; Z. Xiong ; S. Liu ; L. Zhou ; Z. Huang ; N. An ; J. Wang ; Q. Zheng ; Y. Xiong ; G. Wang ; B. Wang ; Y. Fan ; R. R. da Fonseca ; A. Alfaro-Nunez ; M. Schubert ; L. Orlando ; T. Mourier ; J. T. Howard ; G. Ganapathy ; A. Pfenning ; O. Whitney ; M. V. Rivas ; E. Hara ; J. Smith ; M. Farre ; J. Narayan ; G. Slavov ; M. N. Romanov ; R. Borges ; J. P. Machado ; I. Khan ; M. S. Springer ; J. Gatesy ; F. G. Hoffmann ; J. C. Opazo ; O. Hastad ; R. H. Sawyer ; H. Kim ; K. W. Kim ; H. J. Kim ; S. Cho ; N. Li ; Y. Huang ; M. W. Bruford ; X. Zhan ; A. Dixon ; M. F. Bertelsen ; E. Derryberry ; W. Warren ; R. K. Wilson ; S. Li ; D. A. Ray ; R. E. Green ; S. J. O'Brien ; D. Griffin ; W. E. Johnson ; D. Haussler ; O. A. Ryder ; E. Willerslev ; G. R. Graves ; P. Alstrom ; J. Fjeldsa ; D. P. Mindell ; S. V. Edwards ; E. L. Braun ; C. Rahbek ; D. W. Burt ; P. Houde ; Y. Zhang ; H. Yang ; E. D. Jarvis ; M. T. Gilbert
American Association for the Advancement of Science (AAAS)
Published 2014Staff ViewPublication Date: 2014-12-17Publisher: American Association for the Advancement of Science (AAAS)Print ISSN: 0036-8075Electronic ISSN: 1095-9203Topics: BiologyChemistry and PharmacologyComputer ScienceMedicineNatural Sciences in GeneralPhysicsKeywords: Adaptation, Physiological ; Animals ; Biodiversity ; *Biological Evolution ; Birds/classification/*genetics/physiology ; Conserved Sequence ; Diet ; *Evolution, Molecular ; Female ; Flight, Animal ; Genes ; Genetic Variation ; *Genome ; Genomics ; Male ; Molecular Sequence Annotation ; Phylogeny ; Reproduction/genetics ; Selection, Genetic ; Sequence Analysis, DNA ; Synteny ; Vision, Ocular/genetics ; Vocalization, AnimalPublished by: -
7Latest Papers from Table of Contents or Articles in PressH. Ejima ; J. J. Richardson ; K. Liang ; J. P. Best ; M. P. van Koeverden ; G. K. Such ; J. Cui ; F. Caruso
American Association for the Advancement of Science (AAAS)
Published 2013Staff ViewPublication Date: 2013-07-13Publisher: American Association for the Advancement of Science (AAAS)Print ISSN: 0036-8075Electronic ISSN: 1095-9203Topics: BiologyChemistry and PharmacologyComputer ScienceMedicineNatural Sciences in GeneralPhysicsKeywords: Capsules/chemistry/toxicity ; Chemical Engineering/*methods ; Coordination Complexes/*chemical synthesis/toxicity ; Ferric Compounds/chemistry/toxicity ; Hydrogen-Ion Concentration ; Polyphenols/*chemistry/toxicity ; Surface Properties ; Tannins/*chemistry/toxicityPublished by: -
8Latest Papers from Table of Contents or Articles in PressLamas-Murua, M., Stolp, B., Kaw, S., Thoma, J., Tsopoulidis, N., Trautz, B., Ambiel, I., Reif, T., Arora, S., Imle, A., Tibroni, N., Wu, J., Cui, G., Stein, J. V., Tanaka, M., Lyck, R., Fackler, O. T.
The American Association of Immunologists (AAI)
Published 2018Staff ViewPublication Date: 2018-10-23Publisher: The American Association of Immunologists (AAI)Print ISSN: 0022-1767Electronic ISSN: 1550-6606Topics: MedicinePublished by: -
9Latest Papers from Table of Contents or Articles in PressL. Zhang ; X. Ding ; J. Cui ; H. Xu ; J. Chen ; Y. N. Gong ; L. Hu ; Y. Zhou ; J. Ge ; Q. Lu ; L. Liu ; S. Chen ; F. Shao
Nature Publishing Group (NPG)
Published 2011Staff ViewPublication Date: 2011-12-14Publisher: Nature Publishing Group (NPG)Print ISSN: 0028-0836Electronic ISSN: 1476-4687Topics: BiologyChemistry and PharmacologyMedicineNatural Sciences in GeneralPhysicsKeywords: Adaptor Proteins, Signal Transducing/chemistry/*metabolism ; Bacterial Secretion Systems ; Cysteine/*metabolism ; Enteropathogenic Escherichia coli/metabolism/pathogenicity ; Escherichia coli Proteins/*metabolism ; Humans ; Intracellular Signaling Peptides and Proteins/chemistry/*metabolism ; MAP Kinase Kinase Kinases/metabolism ; Methionine/analogs & derivatives/metabolism ; Methylation ; Methyltransferases/metabolism ; NF-kappa B/*antagonists & inhibitors/*metabolism ; Protein Binding ; Protein Structure, Tertiary ; Signal Transduction ; Substrate Specificity ; TNF Receptor-Associated Factor 6 ; Tumor Necrosis Factor Receptor-Associated Peptides and Proteins/metabolism ; Ubiquitin/*metabolism ; Virulence Factors/*metabolism ; Zinc FingersPublished by: -
10Latest Papers from Table of Contents or Articles in PressY. Okada ; D. Wu ; G. Trynka ; T. Raj ; C. Terao ; K. Ikari ; Y. Kochi ; K. Ohmura ; A. Suzuki ; S. Yoshida ; R. R. Graham ; A. Manoharan ; W. Ortmann ; T. Bhangale ; J. C. Denny ; R. J. Carroll ; A. E. Eyler ; J. D. Greenberg ; J. M. Kremer ; D. A. Pappas ; L. Jiang ; J. Yin ; L. Ye ; D. F. Su ; J. Yang ; G. Xie ; E. Keystone ; H. J. Westra ; T. Esko ; A. Metspalu ; X. Zhou ; N. Gupta ; D. Mirel ; E. A. Stahl ; D. Diogo ; J. Cui ; K. Liao ; M. H. Guo ; K. Myouzen ; T. Kawaguchi ; M. J. Coenen ; P. L. van Riel ; M. A. van de Laar ; H. J. Guchelaar ; T. W. Huizinga ; P. Dieude ; X. Mariette ; S. L. Bridges, Jr. ; A. Zhernakova ; R. E. Toes ; P. P. Tak ; C. Miceli-Richard ; S. Y. Bang ; H. S. Lee ; J. Martin ; M. A. Gonzalez-Gay ; L. Rodriguez-Rodriguez ; S. Rantapaa-Dahlqvist ; L. Arlestig ; H. K. Choi ; Y. Kamatani ; P. Galan ; M. Lathrop ; S. Eyre ; J. Bowes ; A. Barton ; N. de Vries ; L. W. Moreland ; L. A. Criswell ; E. W. Karlson ; A. Taniguchi ; R. Yamada ; M. Kubo ; J. S. Liu ; S. C. Bae ; J. Worthington ; L. Padyukov ; L. Klareskog ; P. K. Gregersen ; S. Raychaudhuri ; B. E. Stranger ; P. L. De Jager ; L. Franke ; P. M. Visscher ; M. A. Brown ; H. Yamanaka ; T. Mimori ; A. Takahashi ; H. Xu ; T. W. Behrens ; K. A. Siminovitch ; S. Momohara ; F. Matsuda ; K. Yamamoto ; R. M. Plenge
Nature Publishing Group (NPG)
Published 2014Staff ViewPublication Date: 2014-01-07Publisher: Nature Publishing Group (NPG)Print ISSN: 0028-0836Electronic ISSN: 1476-4687Topics: BiologyChemistry and PharmacologyMedicineNatural Sciences in GeneralPhysicsKeywords: Alleles ; Animals ; Arthritis, Rheumatoid/*drug therapy/*genetics/metabolism/pathology ; Asian Continental Ancestry Group/genetics ; Case-Control Studies ; Computational Biology ; *Drug Discovery ; Drug Repositioning ; European Continental Ancestry Group/genetics ; Female ; Genetic Predisposition to Disease/*genetics ; Genome-Wide Association Study ; Hematologic Neoplasms/genetics/metabolism ; Humans ; Male ; Mice ; Mice, Knockout ; *Molecular Targeted Therapy ; Polymorphism, Single Nucleotide/geneticsPublished by: -
11Articles: DFG German National LicensesCui, J. B. ; Stammler, M. ; Ristein, J. ; Ley, L.
[S.l.] : American Institute of Physics (AIP)
Published 2000Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: The field emission properties of diamond-graphite composites were investigated as a function of composition both for oxidized and hydrogen covered diamond. The composites consist of mixtures of nanocrystalline diamond and graphite particles. In this way their composition could be varied at will while the field enhancement factor of the individual crystallites remained unchanged. The measurements prove that graphite is the phase responsible for low threshold field emission. The apparent emission threshold is strongly influenced by the conductivity of the composites. Hydrogenation has two beneficial effects. It provides a conducting path to the emission sites via the hydrogen induced surface conductivity of diamond. It also lowers the effective emission threshold of graphite in contact with diamond that exhibits negative electron affinity after hydrogenation. The latter effect was experimentally verified by photoelectron yield spectroscopy. © 2000 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
12Articles: DFG German National LicensesCui, J. ; Rusli ; Yoon, S. F. ; Yu, M. B. ; Chew, K. ; Ahn, J. ; Zhang, Q.
[S.l.] : American Institute of Physics (AIP)
Published 2001Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: Hydrogenated amorphous silicon carbide (a-Si1−xCx:H) films have been deposited using an electron cyclotron resonance chemical vapor deposition system. The effects of varying the microwave power from 100 to 1000 W on the deposition rate, optical band gap, film composition, and disorder were studied using various techniques such as Rutherford backscattering spectrometry, spectrophotometry, Fourier-transform infrared absorption, and Raman scattering. Samples deposited at 100 W are found to have a carbon fraction (x) of 0.49 which is close to that of stoichiometric SiC, whereas samples deposited at higher microwave powers are carbon rich with x which are nearly independent of the microwave power. The optical gaps of the films deposited at higher microwave powers were noted to be related to the strength of the C–Hn bond in the films. The photoluminescence (PL) peak emission energy and bandwidth of these films were investigated at different excitation energies (Eex) and correlated to their optical band gaps and Urbach tail widths. Using an Eex of 3.41 eV, the PL peak energy was found to range from 2.44 to 2.79 eV, with the lowest value corresponded to an intermediate microwave power of 600 W. At increasing optical gap, the PL peak energy was found to be blueshifted, accompanied by a narrowing of the bandwidth. Similar blueshift was also observed at increasing Eex, but in this case accompanied by a broadening of the bandwidth. These results can be explained using a PL model for amorphous semiconductors based on tail-to-tail states radiative recombination. A linear relation between the full width at half maximum of the PL spectra and the Urbach energy was also observed, suggesting the broadening of the band tail states as the main factor that contributes to the shape of the PL spectra observed. © 2001 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
13Articles: DFG German National LicensesStaff View
ISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: Hydrogenated amorphous silicon carbide (a-Si1−xCx:H) films have been deposited using the electron cyclotron resonance chemical vapor deposition process under varying negative rf-bias voltage at the substrate. The optical and structural properties of these films are characterized using Rutherford backscattering spectroscopy, transmittance/reflectance spectrophotometry, photothermal deflection spectroscopy, Fourier transform infrared absorption, Raman scattering, and room temperature photoluminescence (PL). These films deposited using a gas mixture of silane, methane, and hydrogen at a constant gas flow ratio showed a slight increase in the carbon fraction x, but very obvious structural transformation, at increasing rf induced bias voltage from −20 to −120 V. Near stoichiometric a-Si1−xCx:H films with a carbon fraction x of almost 0.5 are achieved at low bias voltage range from −20 to −60 V. Visible PL with relatively low efficiency can be observed from such films at room temperature. For larger bias voltages from −80 to −120 V, slightly C-rich a-Si1−xCx:H films (x〉0.5) with larger optical gaps are obtained. These films have relatively higher PL efficiency, and the relative quantum efficiency was also found to depend strongly on the optical gap. Structurally, it was found that there is an increase in the hydrogen content and carbon sp2 bonding in the films at larger bias voltages. The latter leads to an increase in the disorder in the films. The linear relationship observed between the Urbach energy E0 and B factor in the Tauc equation suggests that the local defects related to microstructural disorder resulting from alloying with carbon dominate the overall defect structure of the films. Substrate biasing is noted to be crucial for the formation of Si–C bonds, as deduced from the Raman scattering results. © 2001 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
14Articles: DFG German National LicensesCui, J. B. ; Robertson, J. ; Milne, W. I.
[S.l.] : American Institute of Physics (AIP)
Published 2001Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: The field emission properties of nanostructured carbon films deposited by cathodic vacuum arc have been investigated by measuring both the emission currents and the emission site density. The films have an onset field of 3 V/μm. The emission site density is viewed on a phosphor anode and it increases rapidly with applied field. It is assumed that the emission occurs from surface regions with a range of field enhancement factors but with a constant work function. The field enhancement factor is found to have an exponential distribution. © 2001 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
15Articles: DFG German National LicensesStaff View
ISSN: 1089-7623Source: AIP Digital ArchiveTopics: PhysicsElectrical Engineering, Measurement and Control TechnologyNotes: To understand surface reaction dynamics in III–V compound semiconductor growth, we have developed an apparatus to study both surface chemical reactions and epitaxial growth. This apparatus has double supersonic III and V compound molecular beam cells and an analytical chamber with a rotatable differentially pumped liquid-nitrogen-cooled quadrupole mass spectrometer to measure angular and time-of-flight distribution of reflected beams. It also has reflection high-energy electron diffraction to analyze surface structures. Tertiarybutylarsine beam energies of 1.6 eV were obtained for He, 0.22 eV for Ar, and 0.06 eV for Xe seeding. An organometallic molecular beam of translational energy is varied over a wide range, enabling source molecules to be brought to a well-defined epitaxial surface in well-characterized ways. High-purity GaAs layers were grown by alternatively supplying triethylgallium and tertiarybutylarsine molecules to the analytical chamber. Our apparatus bridges the gap of studies between epitaxial growth and surface chemical reactions. Dynamic measurement on the growth surface revealed a number of interesting reactions not ordinarily observed on well-defined surfaces. © 1999 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
16Articles: DFG German National LicensesMoore, N. ; Okocha, F. ; Cui, J. K. ; Liu, Philip K.
Oxford, UK : Blackwell Science, Ltd
Published 2002Staff ViewISSN: 1471-4159Source: Blackwell Publishing Journal Backfiles 1879-2005Topics: MedicineNotes: The repair of oxidative DNA lesions (ODLs) in the nucleus of ischemic cortical brain cells was examined following experimentally induced stroke by occluding the right middle cerebral artery and both common carotid arteries for 60–90 min followed by reperfusion in male long-Evans hooded rats. The control group consisted of sham-operated animals undergoing the same surgery without vessel occlusion. Using a gene-specific assay based upon the presence of Escherichia coli Fpg protein-sensitive sites, we noted that animals with stroke exhibited six and four ODLs per gene in the actin and DNA polymerase-β genes, respectively. This was increased from one per four copies of each gene in the sham-operated control (p 〈 0.01). One half of the initial ODLs was repaired within 30 min, and 83% of them were repaired as early as 45 min of reperfusion. There was no further increase when gene repair was measured again at 2 h of reperfusion. The rates of active repair within 45 min of reperfusion were the same in these two genes (p = 0.103, anova). BrdU (10 mg/kg) was administered via intraperitoneal injection at least one day before surgery. We observed that there was no significant incorporation of BrdU triphosphates into genomic DNA during active repair, but there were significant amounts of BrdU triphosphate in nuclear DNA after active repair. The result indicates that genomic repair of ODLs in the brain did not significantly incorporate BrdU, and the initiation of neurogenesis probably starts after the completion of repair in the brain.Type of Medium: Electronic ResourceURL: -
17Articles: DFG German National LicensesDischarge induced enhancement of diamond nucleation on Si via hot filament chemical vapor depositionStaff View
ISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: A new pretreatment method involving a direct current discharge was used to enhance diamond nucleation on mirror polished silicon substrates employing hot filament chemical vapor deposition. A nucleation density of 108/cm2 was obtained. The nucleation density on Si substrates pretreated by the discharge at room temperature is similar to that treated at high temperature. The discharge process was monitored by optical emission spectroscopy. Raman scattering, scanning electron microscopy, and x-ray photoelectron spectroscopy were employed to analyze the pretreated Si substrate. The results suggest that a thin carbon layer formed during the discharge pretreatment process which contributes to the enhancement of diamond nucleation. © 1998 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
18Articles: DFG German National LicensesCui, J. B. ; Amtmann, K. ; Ristein, J. ; Ley, L.
[S.l.] : American Institute of Physics (AIP)
Published 1998Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: The possibility of determining the temperature of diamond by noncontact Raman spectroscopy is assessed critically. The intensity ratio of Stokes to anti-Stokes lines is shown to be ill suited for temperatures above ∼750 K. Employing the temperature coefficient of the Raman line position, on the other hand, turns out to be a straightforward and highly reliable means to measure diamond temperatures between 300 and 2000 K with an accuracy of ±10 K. A prerequisite for the application of this method is an empirically developed formula which describes the temperature coefficient of the Raman active phonon frequency with high accuracy. Examples of temperature measurements on single crystal diamond and diamond films grown by chemical vapor deposition are given. The application of this procedure to the temperature measurement of silicon and germanium is demonstrated. © 1998 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
19Articles: DFG German National LicensesCui, J. B. ; Robertson, J. ; Milne, W. I.
[S.l.] : American Institute of Physics (AIP)
Published 2001Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: Field emission of electrons from carbon films deposited on n-type silicon substrate with a resistive layer was investigated by monitoring both the emission current–voltage curves and emission images as displayed by a phosphor anode. The resistive layer was found to effectively improve the emission quality by controlling the emission current and increasing the emission site density. Confinement of the emission current finally results in a uniform emission current across a large range of voltages, which is a key requirement for application to displays. © 2001 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
20Articles: DFG German National LicensesNiemz, M. H. ; Lin, C. P. ; Pitsillides, C. ; Cui, J. ; Doukas, A. G. ; Deutsch, T. F.
Woodbury, NY : American Institute of Physics (AIP)
Published 1997Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: While short compressive stresses can readily be produced by laser ablation, the generation of pure tensile stresses is more difficult. We demonstrate that a 90° prism made of polyethylene can serve to produce short and pure tensile stresses. A compressive wave is generated by ablating a thin layer of strongly absorbing ink on one surface of the prism with a Q-switched frequency-doubled Nd:YAG laser. The compressive wave driven into the prism is reflected as a tensile wave by the polyethylene-air interface at its long surface. The low acoustic impedance of polyethylene makes it ideal for coupling tensile stresses into liquids. In water, tensile stresses up to −200 bars with a rise time of the order of 20 ns and a duration of 100 ns are achieved. The tensile strength of water is determined for pure tensile stresses lasting for 100 ns only. The technique has potential application in studying the initiation of cavitation in liquids and in comparing the effect of compressive and tensile stress transients on biological media. © 1997 American Institute of Physics.Type of Medium: Electronic ResourceURL: