Search Results - (Author, Cooperation:D. Myers)

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  1. 1
    Staff View
    Publication Date:
    2018-01-12
    Publisher:
    Wiley-Blackwell
    Electronic ISSN:
    1097-4652
    Topics:
    Biology
    Medicine
    Published by:
    http://www.wiley.com/wiley-blackwell

    Latest Papers from Table of Contents or Articles in Press
  2. 2
    Kamdar, K., Johnson, A. M. F., Chac, D., Myers, K., Kulur, V., Truevillian, K., De; Paolo, R. W.
    The American Association of Immunologists (AAI)
    Published 2018
    Staff View
    Publication Date:
    2018-06-19
    Publisher:
    The American Association of Immunologists (AAI)
    Print ISSN:
    0022-1767
    Electronic ISSN:
    1550-6606
    Topics:
    Medicine
    Published by:
    http://www.aai.org/

    Latest Papers from Table of Contents or Articles in Press
  3. 3
    Staff View
    Publication Date:
    2011-09-13
    Publisher:
    Nature Publishing Group (NPG)
    Print ISSN:
    0028-0836
    Electronic ISSN:
    1476-4687
    Topics:
    Biology
    Chemistry and Pharmacology
    Medicine
    Natural Sciences in General
    Physics
    Keywords:
    Animals ; B-Lymphocytes/cytology/metabolism ; Cell Lineage/genetics ; Chromosomes, Mammalian/genetics/metabolism ; DNA, Intergenic/*genetics ; Enhancer Elements, Genetic/genetics ; Feedback, Physiological ; Gene Rearrangement, B-Lymphocyte, Heavy Chain/*genetics ; Germ Cells/metabolism ; Immunoglobulin Heavy Chains/genetics ; Immunoglobulin Variable Region/genetics ; Mice ; Mutation/genetics ; Recombination, Genetic/*genetics ; Regulatory Sequences, Nucleic Acid/*genetics ; Repressor Proteins/*metabolism ; Thymus Gland/cytology ; Transcription, Genetic/genetics ; VDJ Exons/*genetics
    Published by:
    http://www.nature.com/

    Latest Papers from Table of Contents or Articles in Press
  4. 4
    Z. Luo ; Y. Jiang ; B. D. Myers ; D. Isheim ; J. Wu ; J. F. Zimmerman ; Z. Wang ; Q. Li ; Y. Wang ; X. Chen ; V. P. Dravid ; D. N. Seidman ; B. Tian
    American Association for the Advancement of Science (AAAS)
    Published 2015
    Staff View
    Publication Date:
    2015-06-27
    Publisher:
    American Association for the Advancement of Science (AAAS)
    Print ISSN:
    0036-8075
    Electronic ISSN:
    1095-9203
    Topics:
    Biology
    Chemistry and Pharmacology
    Computer Science
    Medicine
    Natural Sciences in General
    Physics
    Published by:
    http://www.aaas.org/

    Latest Papers from Table of Contents or Articles in Press
  5. 5
    A. J. Mannix ; X. F. Zhou ; B. Kiraly ; J. D. Wood ; D. Alducin ; B. D. Myers ; X. Liu ; B. L. Fisher ; U. Santiago ; J. R. Guest ; M. J. Yacaman ; A. Ponce ; A. R. Oganov ; M. C. Hersam ; N. P. Guisinger
    American Association for the Advancement of Science (AAAS)
    Published 2015
    Staff View
    Publication Date:
    2015-12-19
    Publisher:
    American Association for the Advancement of Science (AAAS)
    Print ISSN:
    0036-8075
    Electronic ISSN:
    1095-9203
    Topics:
    Biology
    Chemistry and Pharmacology
    Computer Science
    Medicine
    Natural Sciences in General
    Physics
    Keywords:
    Anisotropy ; Boron/*chemistry ; Fullerenes/*chemistry ; Silver/chemistry ; Vacuum
    Published by:
    http://www.aaas.org/

    Latest Papers from Table of Contents or Articles in Press
  6. 6
    D. Myers, J. ; L. Angevine, C. ; D. Frost, C.

    Amsterdam : Elsevier
    Staff View
    ISSN:
    0012-821X
    Source:
    Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics:
    Geosciences
    Physics
    Type of Medium:
    Electronic Resource
    URL:
    http://linkinghub.elsevier.com/retrieve/pii/0012-821X(87)90157-9

    Articles: DFG German National Licenses
  7. 7
    Staff View
    Publication Date:
    2018-08-01
    Publisher:
    The American Society for Microbiology (ASM)
    Print ISSN:
    0022-538X
    Electronic ISSN:
    1098-5514
    Topics:
    Medicine
    Published by:
    http://www.asm.org/

    Latest Papers from Table of Contents or Articles in Press
  8. 8
    Staff View
    Publication Date:
    2018-03-24
    Publisher:
    American Physical Society (APS)
    Electronic ISSN:
    1098-4402
    Topics:
    Physics
    Keywords:
    Pulsed-Power Accelerators, Technology, and Dynamics
    Published by:
    http://www.aps.org/

    Latest Papers from Table of Contents or Articles in Press
  9. 9
    Ashby, C. I. H. ; Myers, D. R. ; Vawter, G. A. ; Biefeld, R. M. ; Datye, A. K.

    [S.l.] : American Institute of Physics (AIP)
    Published 1990
    Staff View
    ISSN:
    1089-7550
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    High concentrations of recombination-promoting impurities in the near-surface region of a semiconductor can produce virtually complete suppression of carrier-driven photochemical etching processes. In-diffusion of Zn to levels appropriate for ohmic contact formation on GaAs (mid-1020/cm3) has been employed to reduce etching to an undetectable level in n-GaAs with n=1.0×1017 and 1.3×1018/cm3 and to produce a greater than ten-fold reduction in etching of semi-insulating GaAs. Raman spectroscopy of the altered near-surface region shows enhanced electronic scattering, which indicates the presence of a sufficient impurity concentration to suppress etching. Transmission electron microscopy shows the near-surface region to be crystalline without significant numbers of defects following Zn diffusion. Possible applications of this process include self-aligned etching of transistor and laser structures.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.346499

    Articles: DFG German National Licenses
  10. 10
    Myers, D. L. ; Wahlbeck, P. G.

    College Park, Md. : American Institute of Physics (AIP)
    Published 1991
    Staff View
    ISSN:
    1089-7690
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Chemistry and Pharmacology
    Notes:
    The vapor pressures of Cu in equilibrium with YBa2Cu3O6.24 were measured as a function of temperature by the Knudsen effusion method using a quadrupole mass spectrometer as the detector. The data were fitted to ln [P(Cu)/bar]=(−66104±4485)(1/T)+(35.360±3.869). The activity of Cu [in YBa2Cu3O6.24(s) ] was calculated as the ratio of the above equilibrium pressure divided by the vapor pressure of pure Cu(s). From the activities, relative chemical potentials were calculated. The vapor pressure of Cu from the superconductor intersects the vapor pressure of Cu from pure Cu(s) at 1290±20 K, which indicates that the superconductor decomposes to metallic Cu at temperatures greater than 1290 K.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.461670

    Articles: DFG German National Licenses
  11. 11
    Wahlbeck, P. G. ; Richards, R. R. ; Myers, D. L.

    College Park, Md. : American Institute of Physics (AIP)
    Published 1991
    Staff View
    ISSN:
    1089-7690
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Chemistry and Pharmacology
    Notes:
    Vaporization reactions for both Tl2O3(s) and a Tl superconductor sample, primarily Tl2Ba2Ca2Cu3Oy(s) (Tl-2223), were determined. The vapor species were examined by Knudsen effusion mass spectrometry at temperatures in the range 657 to 773 K for Tl2O3(s) and 672 to 836 K for Tl-2223. Additional experiments with thermogravimetric analysis (TGA) equipment were performed. In both cases of vaporization of Tl2O3 and Tl-2223, the vapor species were concluded to be Tl2O(g) and O2(g). Vapor pressures were measured. For Tl2O3(s), ΔvapH0 (298.15 K) was measured as 320.4±6 kJ/mol. The activity of Tl2O3 in the Tl-2223 superconductor was measured as 0.0044±0.001 at 750 K. A measure of the stabilization of Tl2O3 in the Tl-2223 superconductor is given by μ(Tl2O3,sc)−μ(Tl2O3,pure)=−33.84±3.0 kJ/mol.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.461191

    Articles: DFG German National Licenses
  12. 12
    Myers, D. R. ; Lee, Kyu ; Hausken, T. ; Simes, R. J. ; Ribot, H. ; Laruelle, F. ; Coldren, L. A.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1990
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    We have intermixed GaAs/(AlGa)As multiquantum structures for waveguides and lasers by 3 MeV Ar implantation and 850 °C, 30 min closed-tube annealing. Buried-heterostructure lasers defined by Ar mixing had threshold currents of 100 mA for 370-μm-long devices. As waveguides for 1.15 μm light, the devices exhibited losses of 25 cm−1 in the annealed, implanted regions, and 15 cm−1 in unimplanted regions defined by adjacent implants. Analysis of the results illustrates important considerations for implant mixing for waveguide formation.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.104115

    Articles: DFG German National Licenses
  13. 13
    Fritz, I. J. ; Myers, D. R. ; Vawter, G. A. ; Brennan, T. M. ; Hammons, B. E.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1991
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    We present a novel approach to optoelectronic devices by combining mechanically stable strained and unstrained epitaxial multilayers. We illustrate our approach with an optical reflectance modulator based on an asymmetric Fabry–Perot resonator designed to operate near 1.06 μm. The resonator is grown on a mechanically relaxed buffer of In0.11Ga0.89As deposited on a GaAs substrate. For mirrors, quarter-wave stacks of In0.11Ga0.89As and In0.1Al0.9As, lattice matched to the buffer, are used. The Fabry–Perot cavity consists of an In0.23Ga0.77As/Al0.35Ga0.65As strained-layer superlattice whose planar lattice constant also matches the buffer. Our first device operates at 1.04–1.05 μm depending on lateral position across the wafer. The insertion loss at resonance is less than 2 db and a fractional modulation of over 60% has been achieved with a 4 V bias swing.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.105140

    Articles: DFG German National Licenses
  14. 14
    Hohimer, J. P. ; Craft, D. C. ; Vawter, G. A. ; Myers, D. R.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1991
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    The production of a near-diffraction-limited single-lobed angle-switchable output beam from a broad-area diode laser with an intracavity spatial phase controller is demonstrated. This 100-μm-wide broad-area laser produces a 0.8° full width at half maximum output beam at single-facet pulsed powers of (approximately-greater-than)300 mW. The spatial phase controller operates in two distinct modes (thermal and gain), providing beam scanning over 1.4° and beam switching of 8°. The phase controller also permits a dynamic study of the effect of wavefront tilt on device coupling and phasing.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.104737

    Articles: DFG German National Licenses
  15. 15
    Myers, D. R. ; Dawson, L. R. ; Klem, J. F. ; Brennan, T. M. ; Hammons, B. E. ; Simons, D. S. ; Comas, J. ; Pellegrino, J.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1990
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    We have quantified unintentional indium incorporation in GaAs grown by molecular beam epitaxy in a variety of commercial systems. We find that the unintentional indium density in the epitaxial GaAs is more a function of mounting technique and prior machine history than of the manufacturer's design. The indium densities detected in the epitaxial GaAs for substrates that only partially obscure an indium-bearing mount are equal to levels reported to result in minimum defect densities and narrowest photoluminescence linewidths in In-doped GaAs.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.103881

    Articles: DFG German National Licenses
  16. 16
    Vawter, G. Allen ; Myers, D. R. ; Brennan, Tom M. ; Hammons, B. E.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1990
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    We report dramatic improvements to the implanted-planar buried-heterostructure graded-index separate confinement heterostructure (IPBH-GRINSCH) laser in (AlGa)As/GaAs which produces low threshold current, continuous-wave operation. Our process features significantly reduced fabrication complexity of high quality, index-guided laser diodes compared to regrowth techniques and, in contrast to diffusion-induced disordering, allows creation of self-aligned, buried, blocking junctions by ion implantation. The improved single-stripe IPBH-GRINSCH lasers exhibit 39 mA threshold current, cw operation.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.103030

    Articles: DFG German National Licenses
  17. 17
    Hohimer, J. P. ; Myers, D. R. ; Brennan, T. M. ; Hammons, B. E.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1989
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    We report the first integrated injection-locked high-power continuous-wave diode laser array with an on-chip independently controlled master laser. This device emits a near-diffraction-limited (0.5° full width at half maximum) single-lobed far-field emission beam at single-facet powers up to 125 mW. Also, by current tuning the emission wavelength of the master laser, we observe steering of the single-lobed emission over an angular range of 0.50° at a rate of −1.2×10−2 deg/mA. Our work demonstrates the feasibility of incorporating active optical injection and control in the structure of high-power diode laser devices.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.101845

    Articles: DFG German National Licenses
  18. 18
    Kaushik, V. S. ; Datye, A. K. ; Kendall, D. L. ; Martinez-Tovar, B. ; Myers, D. R.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1988
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    Coherent growth of α-Si3N4 precipitates is observed in a silicon matrix after implantation of 150 keV N+ at a dose of 1×1018/cm2 into (110) silicon. The near-channeling conditions lead to a band of discrete precipitates, 0.5 μm below the continuous, polycrystalline buried nitride layer. No misfit dislocations or strain contrast were observed in the silicon matrix despite a 10% lattice mismatch along the Si3 N4 [0001] direction and a 1% mismatch along directions perpendicular to [0001]. The mismatch appears to be accommodated entirely within the precipitate by a mosaic structure consisting of single-crystal subunits, coherent with Si at the Si3 N4 (0001)/Si{111} interface, but incoherent perpendicular to these planes.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.99722

    Articles: DFG German National Licenses
  19. 19
    Hohimer, J. P. ; Myers, D. R. ; Brennan, T. M. ; Hammons, B. E.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1990
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    We report measurements of the injection-locking characteristics of a high-power continuous-wave diode laser array with an on-chip independently controlled master laser. This integrated injection-locked array emits a near-diffraction-limited single-lobed output beam at cw power levels up to 220 mW/facet. By controlling the current to the master laser, the single-lobed output beam can be electronically steered over a far-field angle of 〉1.7°. We also report preliminary studies of the coupling interaction in these integrated devices.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.103162

    Articles: DFG German National Licenses
  20. 20
    Ashby, C. I. H. ; Myers, D. R. ; Vawter, G. A. ; Biefeld, R. M.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1989
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    Virtually total suppression of carrier-driven photochemical etching of semi-insulating GaAs, n-GaAs, and n+-GaAs has been achieved by indiffusion of Zn to a surface carrier concentration greater than 1020/cm3. This technique for photochemical reaction suppression can be used as a self-aligned etching technology for semiconductor device fabrication.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.101678

    Articles: DFG German National Licenses