Search Results - (Author, Cooperation:D. Fan)

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  1. 1
    Staff View
    Publication Date:
    2018-01-03
    Publisher:
    Rockefeller University Press
    Print ISSN:
    0022-1007
    Electronic ISSN:
    1540-9538
    Topics:
    Medicine
    Keywords:
    Hematopoiesis
    Published by:
    Latest Papers from Table of Contents or Articles in Press
  2. 2
    Staff View
    Publication Date:
    2016-04-19
    Publisher:
    Nature Publishing Group (NPG)
    Print ISSN:
    0028-0836
    Electronic ISSN:
    1476-4687
    Topics:
    Biology
    Chemistry and Pharmacology
    Medicine
    Natural Sciences in General
    Physics
    Published by:
    Latest Papers from Table of Contents or Articles in Press
  3. 3
    Staff View
    Publication Date:
    2018-03-28
    Publisher:
    The American Society for Microbiology (ASM)
    Print ISSN:
    0066-4804
    Electronic ISSN:
    1098-6596
    Topics:
    Biology
    Medicine
    Published by:
    Latest Papers from Table of Contents or Articles in Press
  4. 4
    Staff View
    Publication Date:
    2018-07-19
    Publisher:
    Royal Society
    Electronic ISSN:
    2054-5703
    Topics:
    Natural Sciences in General
    Keywords:
    biomaterials
    Published by:
    Latest Papers from Table of Contents or Articles in Press
  5. 5
    Lin, D., Fan, J., Wang, J., Liu, L., Xu, L., Li, F., Yang, J., Li, B.
    The American Society for Microbiology (ASM)
    Published 2018
    Staff View
    Publication Date:
    2018-07-24
    Publisher:
    The American Society for Microbiology (ASM)
    Print ISSN:
    0019-9567
    Electronic ISSN:
    1098-5522
    Topics:
    Medicine
    Published by:
    Latest Papers from Table of Contents or Articles in Press
  6. 6
    G. Zhang ; X. Fang ; X. Guo ; L. Li ; R. Luo ; F. Xu ; P. Yang ; L. Zhang ; X. Wang ; H. Qi ; Z. Xiong ; H. Que ; Y. Xie ; P. W. Holland ; J. Paps ; Y. Zhu ; F. Wu ; Y. Chen ; J. Wang ; C. Peng ; J. Meng ; L. Yang ; J. Liu ; B. Wen ; N. Zhang ; Z. Huang ; Q. Zhu ; Y. Feng ; A. Mount ; D. Hedgecock ; Z. Xu ; Y. Liu ; T. Domazet-Loso ; Y. Du ; X. Sun ; S. Zhang ; B. Liu ; P. Cheng ; X. Jiang ; J. Li ; D. Fan ; W. Wang ; W. Fu ; T. Wang ; B. Wang ; J. Zhang ; Z. Peng ; Y. Li ; N. Li ; M. Chen ; Y. He ; F. Tan ; X. Song ; Q. Zheng ; R. Huang ; H. Yang ; X. Du ; L. Chen ; M. Yang ; P. M. Gaffney ; S. Wang ; L. Luo ; Z. She ; Y. Ming ; W. Huang ; B. Huang ; Y. Zhang ; T. Qu ; P. Ni ; G. Miao ; Q. Wang ; C. E. Steinberg ; H. Wang ; L. Qian ; X. Liu ; Y. Yin
    Nature Publishing Group (NPG)
    Published 2012
    Staff View
    Publication Date:
    2012-09-21
    Publisher:
    Nature Publishing Group (NPG)
    Print ISSN:
    0028-0836
    Electronic ISSN:
    1476-4687
    Topics:
    Biology
    Chemistry and Pharmacology
    Medicine
    Natural Sciences in General
    Physics
    Keywords:
    Adaptation, Physiological/*genetics ; Animal Shells/chemistry/*growth & development ; Animals ; Apoptosis Regulatory Proteins/genetics ; Crassostrea/*genetics ; DNA Transposable Elements/genetics ; Evolution, Molecular ; Female ; Gene Expression Regulation, Developmental/genetics ; Genes, Homeobox/genetics ; Genome/*genetics ; Genomics ; HSP70 Heat-Shock Proteins/genetics ; Humans ; Larva/genetics/growth & development ; Mass Spectrometry ; Molecular Sequence Annotation ; Molecular Sequence Data ; Polymorphism, Genetic/genetics ; Repetitive Sequences, Nucleic Acid/genetics ; Sequence Analysis, DNA ; Stress, Physiological/genetics/*physiology ; Transcriptome/genetics
    Published by:
    Latest Papers from Table of Contents or Articles in Press
  7. 7
    Staff View
    Publication Date:
    2012-10-05
    Publisher:
    Nature Publishing Group (NPG)
    Print ISSN:
    0028-0836
    Electronic ISSN:
    1476-4687
    Topics:
    Biology
    Chemistry and Pharmacology
    Medicine
    Natural Sciences in General
    Physics
    Keywords:
    Agriculture/*history ; Breeding/history ; Crops, Agricultural/classification/*genetics/growth & development ; *Evolution, Molecular ; Genetic Variation/*genetics ; Genome, Plant/*genetics ; Genomics ; *Geographic Mapping ; History, Ancient ; Oryza/classification/*genetics/growth & development ; Phylogeny ; Polymorphism, Single Nucleotide/genetics ; Selection, Genetic
    Published by:
    Latest Papers from Table of Contents or Articles in Press
  8. 8
    Liang, Z., Fan, D.
    American Association for the Advancement of Science (AAAS)
    Published 2018
    Staff View
    Publication Date:
    2018-09-15
    Publisher:
    American Association for the Advancement of Science (AAAS)
    Electronic ISSN:
    2375-2548
    Topics:
    Natural Sciences in General
    Published by:
    Latest Papers from Table of Contents or Articles in Press
  9. 9
    Staff View
    Publication Date:
    2018-09-18
    Publisher:
    The American Association of Immunologists (AAI)
    Print ISSN:
    0022-1767
    Electronic ISSN:
    1550-6606
    Topics:
    Medicine
    Published by:
    Latest Papers from Table of Contents or Articles in Press
  10. 10
    D Li, P Zhou, L T Fan, D F Zou, W D Yu, J J Guo and Q Y Wang
    Institute of Physics (IOP)
    Published 2018
    Staff View
    Publication Date:
    2018-09-20
    Publisher:
    Institute of Physics (IOP)
    Print ISSN:
    1757-8981
    Electronic ISSN:
    1757-899X
    Topics:
    Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Published by:
    Latest Papers from Table of Contents or Articles in Press
  11. 11
    Fan, D. ; Jaccodine, R. J.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1989
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    Transient-enhanced diffusion of boron is studied by comparing through-oxide and direct boron implants. Some of the directly implanted wafers are differentially anodized and etched to depths equal to the thicknesses of the thermal oxides. Spreading resistance profiles after annealing reveal that transient-enhanced diffusion of boron can be prevented by implantation through oxide. The result indicates that the presence of recoiled oxygen in the through-oxide implanted silicon can be important in reducing dopant-enhanced diffusion.
    Type of Medium:
    Electronic Resource
    URL:
    Articles: DFG German National Licenses
  12. 12
    Huang, J. ; Fan, D. ; Jaccodine, R. J.

    [S.l.] : American Institute of Physics (AIP)
    Published 1988
    Staff View
    ISSN:
    1089-7550
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    Low-temperature annealing (525 °C–800 °C) of 50-keV, 1×1015-cm−2, boron-implanted silicon was studied with the emphasis on the mechanisms responsible for the reverse annealing as well as the enhanced diffusion of the implanted boron. The electrical properties of boron-implanted silicon were analyzed with Hall measurement. Boron depth profiles were also measured using secondary-ion mass spectrometry. These results were then correlated with cross-section transmission electron microscopy studies and deep-level transient spectroscopy studies. It is shown that reverse annealing is possibly due to boron-silicon interstitial complexes, rather than the formation of the commonly observed rodlike defects or precipitates. On the other hand, the enhanced tail diffusion of boron is found to be most likely associated with self-interstitials. Consequently, vacancy trapping of the silicon interstitial component may account for both the charge carrier recovery and the ending of the enhanced tail diffusion of implanted boron.
    Type of Medium:
    Electronic Resource
    URL:
    Articles: DFG German National Licenses
  13. 13
    Fan, D. ; Parks, J. M. ; Jaccodine, R. J.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1991
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    Annealing of boron through-oxide implanted silicon has been known to induce an incubated, oxygen-precipitation enhanced boron diffusion. In this letter, it is shown that annealing the "through-oxide'' implants in a NF3-containing N2 ambient effectively reduces the incubated enhanced diffusion. The effect of fluorine is further demonstrated for boron plus fluorine through-oxide implants with pure N2 annealing. Comparing the boron diffusion between boron plus fluorine and boron plus neon implants suggests that fluorine does not have a chemical effect on capturing the point defects that cause the enhanced diffusion. Rather, fluorine is believed to be incorporated in the oxygen precipitates, which alters the point defect generation.
    Type of Medium:
    Electronic Resource
    URL:
    Articles: DFG German National Licenses
  14. 14
    Chu, B. ; Fan, D. ; Li, W. L. ; Hong, Z. R. ; Li, R. G.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 2002
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    An organic-film photovoltaic (PV) cell, in which N,N′-bis-(1-naphthyl)- N,N′- diphenyl- 1,1′- biphenyl-4,4′-diamine (NPB) and tris(acetylacetonato)-(monophenothroline) yttrium [Y(ACA)3phen] were used as electron-acceptor and donor, respectively, has been fabricated. Under UV light (4 mW/cm2), the short-circuit current (Isc), open-circuit voltage (Voc), fill factor (FF) and the overall power conversion efficiency of the optimum PV cell were 46 μA/cm2, 2.15 V, 0.30%, and 0.7%, respectively. The photocurrent response region of the cell parallels the adsorption of NPB. The PV effect is attributed to exciplex formation at the interface between the two organic films. The PV cell described displays electroluminescence (EL) emission of blue light upon application of a dc voltage. The maximum luminance was 750 cd/m2 at 15 V driving voltage. © 2002 American Institute of Physics.
    Type of Medium:
    Electronic Resource
    URL:
    Articles: DFG German National Licenses
  15. 15
    Fan, D. ; Jaccodine, R. J.

    [S.l.] : American Institute of Physics (AIP)
    Published 1990
    Staff View
    ISSN:
    1089-7550
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    Annealing of silicon implanted with boron through a surface oxide results in an enhanced diffusion of boron. This enhanced diffusion is suppressed during an initial incubation period. An activation energy of 2 eV is associated with the enhanced diffusion, indicating excess silicon interstitials may be involved. On the other hand, the process leading to the onset of enhanced diffusion possesses an apparent activation energy of 3.7 eV. Two-step annealing reduces the latter value to 2.6 eV, the activation energy for interstitial oxygen diffusion. The different activation energies evaluated for the saturation process will be discussed. Transmission electron microscopy shows that the coalescence of dislocations, as well as the growth of faulted loops, proceeds rapidly after the incubation period for enhance diffusion. Precipitates along small dislocation loops are also observed after the incubation period. It is proposed that oxygen precipitation, with emission of silicon interstitials, predominates for annealing beyond the incubation period and is therefore responsible for the enhanced diffusion of boron. The enhanced diffusion sequence is initially incubated by trapping oxygen at dislocations. The real onset of the enhanced diffusion occurs when the dislocations are saturated and the oxide precipitation at the dislocations commences.
    Type of Medium:
    Electronic Resource
    URL:
    Articles: DFG German National Licenses
  16. 16
    Fan, D.-F. ; Oshima, H. ; Troen, B.R. ; Troen, P.

    Amsterdam : Elsevier
    Staff View
    ISSN:
    0005-2760
    Source:
    Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics:
    Biology
    Chemistry and Pharmacology
    Medicine
    Physics
    Type of Medium:
    Electronic Resource
    URL:
    Articles: DFG German National Licenses
  17. 17
    SAMBROOK, J. F. ; FAN, D. P. ; BRENNER, S.

    [s.l.] : Nature Publishing Group
    Published 1967
    Staff View
    ISSN:
    1476-4687
    Source:
    Nature Archives 1869 - 2009
    Topics:
    Biology
    Chemistry and Pharmacology
    Medicine
    Natural Sciences in General
    Physics
    Notes:
    [Auszug] It has already been shown that, In Escherichia coli, the nucleic acid triplet UGA does not code for an amino-acid (Nature, 213, 449; 1967). The isolation of a strong specific suppressor for this triplet has permitted experiments which suggest that in E. coli UGA terminates the polypeptide ...
    Type of Medium:
    Electronic Resource
    URL:
    Articles: DFG German National Licenses
  18. 18
    Fan, D. ; Parker, P. ; Massaro, D.

    Amsterdam : Elsevier
    Staff View
    ISSN:
    0167-4781
    Keywords:
    (Rabbit macrophage) ; Phagocytosis ; Protein synthesis ; Ribosome transit time ; phenylalanine-tRNA
    Source:
    Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics:
    Biology
    Chemistry and Pharmacology
    Medicine
    Physics
    Type of Medium:
    Electronic Resource
    URL:
    Articles: DFG German National Licenses
  19. 19
    Saito, M. ; Lachman, L.B. ; Fan, D.

    Amsterdam : Elsevier
    Staff View
    ISSN:
    1043-4666
    Source:
    Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics:
    Biology
    Medicine
    Type of Medium:
    Electronic Resource
    URL:
    Articles: DFG German National Licenses
  20. 20
    Staff View
    ISSN:
    0014-4827
    Source:
    Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics:
    Biology
    Medicine
    Type of Medium:
    Electronic Resource
    URL:
    Articles: DFG German National Licenses