Search Results - (Author, Cooperation:D. Chan)
-
1Latest Papers from Table of Contents or Articles in PressVictor, A. R., Weigel, C., Scoville, S. D., Chan, W. K., Chatman, K., Nemer, M. M., Mao, C., Young, K. A., Zhang, J., Yu, J., Freud, A. G., Oakes, C. C., Caligiuri, M. A.
The American Association of Immunologists (AAI)
Published 2018Staff ViewPublication Date: 2018-01-09Publisher: The American Association of Immunologists (AAI)Print ISSN: 0022-1767Electronic ISSN: 1550-6606Topics: MedicinePublished by: -
2Latest Papers from Table of Contents or Articles in PressTadas K. Rimkus, Richard L. Carpenter, Sherona Sirkisoon, Dongqin Zhu, Boris C. Pasche, Michael D. Chan, Glenn J. Lesser, Stephen B. Tatter, Kounosuke Watabe, Waldemar Debinski, Hui-Wen Lo
The American Association for Cancer Research (AACR)
Published 2018Staff ViewPublication Date: 2018-05-16Publisher: The American Association for Cancer Research (AACR)Print ISSN: 0008-5472Electronic ISSN: 1538-7445Topics: MedicinePublished by: -
3Latest Papers from Table of Contents or Articles in PressFei Xing, Yin Liu, Shih-Ying Wu, Kerui Wu, Sambad Sharma, Yin-Yuan Mo, Jiamei Feng, Stephanie Sanders, Guangxu Jin, Ravi Singh, Pierre-Alexandre Vidi, Abhishek Tyagi, Michael D. Chan, Jimmy Ruiz, Waldemar Debinski, Boris C. Pasche, Hui-Wen Lo, Linda J. Metheny-Barlow, Ralph B D'Agostino, Jr, Kounosuke Watabe
The American Association for Cancer Research (AACR)
Published 2018Staff ViewPublication Date: 2018-08-02Publisher: The American Association for Cancer Research (AACR)Print ISSN: 0008-5472Electronic ISSN: 1538-7445Topics: MedicinePublished by: -
4Latest Papers from Table of Contents or Articles in PressM. J. Gelfand ; J. L. Raver ; L. Nishii ; L. M. Leslie ; J. Lun ; B. C. Lim ; L. Duan ; A. Almaliach ; S. Ang ; J. Arnadottir ; Z. Aycan ; K. Boehnke ; P. Boski ; R. Cabecinhas ; D. Chan ; J. Chhokar ; A. D'Amato ; M. Ferrer ; I. C. Fischlmayr ; R. Fischer ; M. Fulop ; J. Georgas ; E. S. Kashima ; Y. Kashima ; K. Kim ; A. Lempereur ; P. Marquez ; R. Othman ; B. Overlaet ; P. Panagiotopoulou ; K. Peltzer ; L. R. Perez-Florizno ; L. Ponomarenko ; A. Realo ; V. Schei ; M. Schmitt ; P. B. Smith ; N. Soomro ; E. Szabo ; N. Taveesin ; M. Toyama ; E. Van de Vliert ; N. Vohra ; C. Ward ; S. Yamaguchi
American Association for the Advancement of Science (AAAS)
Published 2011Staff ViewPublication Date: 2011-05-28Publisher: American Association for the Advancement of Science (AAAS)Print ISSN: 0036-8075Electronic ISSN: 1095-9203Topics: BiologyChemistry and PharmacologyComputer ScienceMedicineNatural Sciences in GeneralPhysicsKeywords: Adult ; *Behavior ; *Cross-Cultural Comparison ; *Cultural Characteristics ; Female ; Government ; Humans ; Male ; Permissiveness ; Political Systems ; Population Density ; *Social Behavior ; *Social Conformity ; Social Control, Formal ; *Social Values ; Young AdultPublished by: -
5Latest Papers from Table of Contents or Articles in PressSit, R. W. S., Chan, K. K. W., Yip, B. H. K., Zhang, D. D., Reeves, K. D., Chan, Y. H., Chung, V. C. H., Wong, S. Y. S.
BMJ Publishing
Published 2018Staff ViewPublication Date: 2018-03-15Publisher: BMJ PublishingElectronic ISSN: 2044-6055Topics: MedicineKeywords: Open access, Rehabilitation medicinePublished by: -
6Latest Papers from Table of Contents or Articles in PressGupta, S., Chan, D. W., Zaal, K. J., Kaplan, M. J.
The American Association of Immunologists (AAI)
Published 2018Staff ViewPublication Date: 2018-01-09Publisher: The American Association of Immunologists (AAI)Print ISSN: 0022-1767Electronic ISSN: 1550-6606Topics: MedicinePublished by: -
7Latest Papers from Table of Contents or Articles in PressChan, D. X. H., Sim, Y. E., Chan, Y. H., Poopalalingam, R., Abdullah, H. R.
BMJ Publishing
Published 2018Staff ViewPublication Date: 2018-03-25Publisher: BMJ PublishingElectronic ISSN: 2044-6055Topics: MedicineKeywords: Open access, Health services researchPublished by: -
8Latest Papers from Table of Contents or Articles in PressKunadian, V., Chan, D., Ali, H., Wilkinson, N., Howe, N., McColl, E., Thornton, J., von Wilamowitz-Moellendorff, A., Holstein, E.-M., Burns, G., Fisher, A., Stocken, D., De Soyza, A., On behalf of APPLE COPD-ICON2 Trial Investigators
BMJ Publishing
Published 2018Staff ViewPublication Date: 2018-05-27Publisher: BMJ PublishingElectronic ISSN: 2044-6055Topics: MedicineKeywords: Open access, Cardiovascular medicinePublished by: -
9Articles: DFG German National LicensesChan, D. S. H. ; Phang, J. C. H. ; Chim, W. K. ; Liu, Y. Y. ; Tao, J. M.
[S.l.] : American Institute of Physics (AIP)
Published 1996Staff ViewISSN: 1089-7623Source: AIP Digital ArchiveTopics: PhysicsElectrical Engineering, Measurement and Control TechnologyNotes: This article describes the design and performance of a new spectroscopic photon emission microscope system with panchromatic imaging and continuous wavelength spectroscopic capabilities. Very low levels of light emissions from biased devices can be detected and high resolution spectral characteristics can be analyzed because of the highly efficient light collection and transmission optics. Results shown include those metal oxide semiconductor transistors biased in saturation, forward and reverse biased p-n junctions, and oxide leakage. The potential use of the "defect fingerprinting'' technique, whereby a unique spectral signature is assigned to each failure mechanism, is also discussed. © 1996 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
10Articles: DFG German National LicensesChim, W. K. ; Leang, S. E. ; Chan, D. S. H.
[S.l.] : American Institute of Physics (AIP)
Published 1997Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: In this article, a new charge-extraction algorithm is proposed for extracting the spatial distributions of hot-carrier-induced interface states and trapped charges in p- and n- metal-oxide-semiconductor field-effect transistors, based on the charge-pumping measurement data. This extraction algorithm is physics based and provides a better understanding of how the presence of hot-carrier-induced trapped charges and interface states affect the charge-pumping curves. The extraction time for this new algorithm is very fast (typically 30 s) and does not require very tedious computer simulation. The verification of this method was performed using TSUPREM-4 and MEDICI simulations. With this new extraction method, one can gain better insight into the degradation mechanisms taking place under different hot-carrier stressing conditions. © 1997 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
11Articles: DFG German National LicensesLau, W. S. ; Chan, D. S. H. ; Phang, J. C. H. ; Chow, K. W. ; Pey, K. S. ; Lim, Y. P. ; Sane, V. ; Cronquist, B.
[S.l.] : American Institute of Physics (AIP)
Published 1995Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: A new low-voltage contrast mechanism due to electron-hole pairs generated in the oxide by an electron beam was observed at electric fields lower than 3.5 MV/cm. This is in addition to the tunneling current microscopy (TCM) contrast mechanism observed at electric fields higher than 3.5 MV/cm. The new contrast mechanism is opposite in sign to the TCM contrast mechanism such that the image of a local thinning defect in the oxide is dark at low bias voltage and bright at higher bias voltage. Good contrast can be obtained at electric field as low as 2.4 MV/cm. Applications include large area imaging of oxide defects and quantitative mapping of small oxide thickness variations. © 1995 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
12Articles: DFG German National LicensesLu, Y. F. ; Ren, Z. M. ; Song, W. D. ; Chan, D. S. H.
[S.l.] : American Institute of Physics (AIP)
Published 1998Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: Carbon nitride thin films were deposited by 532 nm Nd:YAG laser ablation of graphite assisted by a nitrogen ion beam bombardment on silicon substrates. Different nitrogen ion beam energies (200, 400, and 600 eV) were used while the laser parameters remained fixed. X-ray photoelectron spectroscopy (XPS) and ellipsometry measurements were carried out to analyze the electronic and optical properties. The XPS C 1s spectrum for the C–N binding is at 286.5 eV while the N 1s spectrum has a corresponding peak of C–N binding at 396.9 eV. The optical gap Eopt is on the order of magnitude of 10−1 eV and increases with the N/C ratio in the deposited film. Linear dependence of the refractive index n and the extinction coefficient k on photon energy E in the range of 1.5–3.5 eV are established. © 1998 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
13Articles: DFG German National LicensesLu, Y. F. ; Ren, Z. M. ; Song, W. D. ; Chan, D. S. H. ; Low, T. S.
[S.l.] : American Institute of Physics (AIP)
Published 1998Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: Carbon nitride thin films were deposited on silicon wafers by pulsed KrF excimer laser (wavelength 248 nm, duration 23 ns) ablation of graphite in a nitrogen atmosphere. Different excimer laser fluences and pressures of the nitrogen atmosphere were used in order to achieve a nitrogen content as high as possible in the deposited thin films. Fourier transform infrared and x-ray photoelectron spectroscopies were used to identify the binding structure and the content of the nitrogen species in the deposited thin films. The N/C ratio 0.42 was obtained at an excimer laser fluence of 0.8 J cm−2 at a repetition rate of 10 Hz under a nitrogen pressure of PN=100 mTorr. A high content of C(Double Bond)N double bond instead of C(Triple Bond)N triple band was indicated in the deposited thin films. Ellipsometry was used to analyze the optical properties of the deposited thin films. The carbon nitride thin films have amorphous-semiconductorlike characteristics with an optical band gap Eopt of 0.42 eV. © 1998 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
14Articles: DFG German National LicensesStaff View
ISSN: 1471-4159Source: Blackwell Publishing Journal Backfiles 1879-2005Topics: MedicineType of Medium: Electronic ResourceURL: -
15Articles: DFG German National LicensesStaff View
ISSN: 1471-4159Source: Blackwell Publishing Journal Backfiles 1879-2005Topics: MedicineNotes: —Proteolipids were previously considered to be resistant to proteolytic digestion. In the present study, crude bovine white matter proteolipid, proteolipid apoprotein, and chemically modified proteolipids were subjected to the action of the following proteolytic enzymes in the absence and presence of detergents: trypsin, α-chymotrypsin, elastase, thermolysin and collagenase. The course of digestion was followed by the release of Fluorescamine-reactive groups. Tryptic digestion of the crude proteolipid and the apoprotein in the absence of detergent amounted to 10 and 40% respectively of the digestion in the presence of detergent. Peptide mapping and protein analyses of both the soluble digests and the insoluble residues confirmed digestion. In the presence of either sodium deoxycholate or Triton X-100, essentially all of the crude proteolipid and 60% of the proteolipid apoprotein were solubilized by trypsin. Digestion of the apoprotein was observed only in preparations which had not been dried. In the absence of detergent, (1) the oxidized crude proteolipid was more susceptible to tryptic digestion than were either the unoxidized or carboxymethylated preparations, (2) both the apoprotein and the oxidized proteolipid were digested by thermolysin or α-chymotrypsin, and (3) all preparations were attacked by elastase.Type of Medium: Electronic ResourceURL: -
16Articles: DFG German National LicensesChan, D. K. ; Davis, B. M. ; Seidman, D. N.
[S.l.] : American Institute of Physics (AIP)
Published 1994Staff ViewISSN: 1089-7623Source: AIP Digital ArchiveTopics: PhysicsElectrical Engineering, Measurement and Control TechnologyNotes: We present new time-of-flight electronics for atom-probe field-ion microscopy that is based on the LeCroy 2277/EXP2 time-to-digital converter (TDC) and is significantly superior to the commonly used LeCroy 4208 TDC. The maximum number of ions detected for each cycle is increased, the electronics dead time is decreased, and the pulse width from the Phillips Scientific 6904 discriminator is measured. The LeCroy 2277/EXP2 TDC records up to 128 ions per field evaporation pulse as opposed to a maximum of eight ions for a single LeCroy 4208 TDC. The dead time is reduced by increasing the pulse pair resolution, in the multihit mode of the TDC, from 7.3 to 3.3 ns. The LeCroy 2277/EXP2 TDC has both leading and trailing edge detection capability, allowing us to measure the pulse width generated by the Phillips Scientific 6904 discriminator. Combining the pulse width measurement capability with the updating capability of the Phillips Scientific 6904 discriminator, in which the discriminator extends the output pulse width by the time difference between two closely spaced (〈2 ns) pulses, we resolve two ions arriving within 2 ns of each other. With these improvements, we find that 66% of the total number of multiply field-evaporated ions arriving with a pulse separation of up to 8 ns are incorrectly counted as a single ion. The percentage of multiply field-evaporated ions occurring with a pulse separation of 2 ns is 6%.Type of Medium: Electronic ResourceURL: -
17Articles: DFG German National LicensesLau, W. S. ; Chan, D. S. H. ; Phang, J. C. H. ; Chow, K. W. ; Pey, K. S. ; Lim, Y. P. ; Cronquist, B.
Woodbury, NY : American Institute of Physics (AIP)
Published 1993Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: A new low-voltage contrast mechanism due to electron hole pairs generated in the oxide by an electron beam was observed at an electric field lower than 3.5 MV/cm in addition to the tunneling current microscopy (TCM) contrast mechanism at electric fields higher than 3.5 MV/cm. The new contrast mechanism is opposite in sign to the TCM contrast mechanism. Good contrast can be obtained at an electric field as low as 2.4 MV/cm, which is two to three times smaller than that needed for TCM contrast. Potential applications include large area imaging and quantitative imaging of oxide defects.Type of Medium: Electronic ResourceURL: -
18Articles: DFG German National LicensesPhang, J. C. H. ; Sim, K. S. ; Chan, D. S. H.
Woodbury, NY : American Institute of Physics (AIP)
Published 1994Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: Numerical simulations show that the sidewall of a probe hole in the SiO2 passivation layer of an integrated circuit charges negatively when a 1 keV beam is probing a test point inside the probe hole. The negative charges on the sidewalls create a local electric field that suppresses the low-energy secondary electrons and at the same time focuses the higher-energy secondary electrons. These potential barrier and lens effects degrade the detected secondary electron signal and may have significant consequences for voltage contrast measurements. © 1994 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
19Articles: DFG German National LicensesKolachina, S. ; Ong, V. K. S. ; Chan, D. S. H. ; Phang, J. C. H. ; Osipowicz, T. ; Watt, F.
Woodbury, NY : American Institute of Physics (AIP)
Published 1996Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: A new contrast mechanism in ion beam induced charge imaging in semiconductors is reported. Junctions not directly connected to the charge collection preamplifier were found to give rise to significant charge collection signals. Imaging with these signals is carried out, thus enabling the mapping of junctions not directly connected to the charge collection amplifier. © 1996 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
20Articles: DFG German National LicensesLiu, X. ; Chan, D. S. H. ; Chim, W. K. ; Phang, J. C. H.
Woodbury, NY : American Institute of Physics (AIP)
Published 1998Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: In this letter, we describe the hot-electron-injection-induced 2.7 eV luminescence centers and the interfacial stress dependence of the 2.7 eV cathodoluminescence peak buildup in SiO2–Si structures. The results suggest that electrical stress may relax the interface strain and modulate the radiation sensitivity. This phenomenon may be extended to provide a nonelectrical and physical evaluation of the electrical stress degradation of SiO2–Si structures. Possible mechanisms are proposed to explain the observations. © 1998 American Institute of Physics.Type of Medium: Electronic ResourceURL: