Search Results - (Author, Cooperation:C. F. Lin)
-
1Latest Papers from Table of Contents or Articles in PressKuo, M.-C., Lin, T.-H., Sun, C.-F., Lin, T.-L., Wu, J.-H., Wang, P.-N., Huang, Y.-J., Chang, H., Huang, T.-Y., Shih, L.-Y.
BMJ Publishing Group
Published 2018Staff ViewPublication Date: 2018-05-17Publisher: BMJ Publishing GroupPrint ISSN: 0021-9746Electronic ISSN: 1472-4146Topics: MedicinePublished by: -
2Latest Papers from Table of Contents or Articles in PressS. De Rubeis ; X. He ; A. P. Goldberg ; C. S. Poultney ; K. Samocha ; A. E. Cicek ; Y. Kou ; L. Liu ; M. Fromer ; S. Walker ; T. Singh ; L. Klei ; J. Kosmicki ; F. Shih-Chen ; B. Aleksic ; M. Biscaldi ; P. F. Bolton ; J. M. Brownfeld ; J. Cai ; N. G. Campbell ; A. Carracedo ; M. H. Chahrour ; A. G. Chiocchetti ; H. Coon ; E. L. Crawford ; S. R. Curran ; G. Dawson ; E. Duketis ; B. A. Fernandez ; L. Gallagher ; E. Geller ; S. J. Guter ; R. S. Hill ; J. Ionita-Laza ; P. Jimenz Gonzalez ; H. Kilpinen ; S. M. Klauck ; A. Kolevzon ; I. Lee ; I. Lei ; J. Lei ; T. Lehtimaki ; C. F. Lin ; A. Ma'ayan ; C. R. Marshall ; A. L. McInnes ; B. Neale ; M. J. Owen ; N. Ozaki ; M. Parellada ; J. R. Parr ; S. Purcell ; K. Puura ; D. Rajagopalan ; K. Rehnstrom ; A. Reichenberg ; A. Sabo ; M. Sachse ; S. J. Sanders ; C. Schafer ; M. Schulte-Ruther ; D. Skuse ; C. Stevens ; P. Szatmari ; K. Tammimies ; O. Valladares ; A. Voran ; W. Li-San ; L. A. Weiss ; A. J. Willsey ; T. W. Yu ; R. K. Yuen ; E. H. Cook ; C. M. Freitag ; M. Gill ; C. M. Hultman ; T. Lehner ; A. Palotie ; G. D. Schellenberg ; P. Sklar ; M. W. State ; J. S. Sutcliffe ; C. A. Walsh ; S. W. Scherer ; M. E. Zwick ; J. C. Barett ; D. J. Cutler ; K. Roeder ; B. Devlin ; M. J. Daly ; J. D. Buxbaum
Nature Publishing Group (NPG)
Published 2014Staff ViewPublication Date: 2014-11-05Publisher: Nature Publishing Group (NPG)Print ISSN: 0028-0836Electronic ISSN: 1476-4687Topics: BiologyChemistry and PharmacologyMedicineNatural Sciences in GeneralPhysicsKeywords: Amino Acid Sequence ; Child Development Disorders, Pervasive/*genetics/pathology ; Chromatin/*genetics/metabolism ; Chromatin Assembly and Disassembly ; Exome/genetics ; Female ; Genetic Predisposition to Disease/*genetics ; Germ-Line Mutation/genetics ; Humans ; Male ; Molecular Sequence Data ; Mutation/*genetics ; Mutation, Missense/genetics ; Nerve Net/metabolism ; Odds Ratio ; Synapses/*metabolism ; Transcription, Genetic/*geneticsPublished by: -
3Latest Papers from Table of Contents or Articles in PressB. M. Neale ; Y. Kou ; L. Liu ; A. Ma'ayan ; K. E. Samocha ; A. Sabo ; C. F. Lin ; C. Stevens ; L. S. Wang ; V. Makarov ; P. Polak ; S. Yoon ; J. Maguire ; E. L. Crawford ; N. G. Campbell ; E. T. Geller ; O. Valladares ; C. Schafer ; H. Liu ; T. Zhao ; G. Cai ; J. Lihm ; R. Dannenfelser ; O. Jabado ; Z. Peralta ; U. Nagaswamy ; D. Muzny ; J. G. Reid ; I. Newsham ; Y. Wu ; L. Lewis ; Y. Han ; B. F. Voight ; E. Lim ; E. Rossin ; A. Kirby ; J. Flannick ; M. Fromer ; K. Shakir ; T. Fennell ; K. Garimella ; E. Banks ; R. Poplin ; S. Gabriel ; M. DePristo ; J. R. Wimbish ; B. E. Boone ; S. E. Levy ; C. Betancur ; S. Sunyaev ; E. Boerwinkle ; J. D. Buxbaum ; E. H. Cook, Jr. ; B. Devlin ; R. A. Gibbs ; K. Roeder ; G. D. Schellenberg ; J. S. Sutcliffe ; M. J. Daly
Nature Publishing Group (NPG)
Published 2012Staff ViewPublication Date: 2012-04-13Publisher: Nature Publishing Group (NPG)Print ISSN: 0028-0836Electronic ISSN: 1476-4687Topics: BiologyChemistry and PharmacologyMedicineNatural Sciences in GeneralPhysicsKeywords: Autistic Disorder/*genetics ; Case-Control Studies ; DNA-Binding Proteins/*genetics ; Exome/genetics ; Exons/*genetics ; Family Health ; Genetic Predisposition to Disease/*genetics ; Humans ; Models, Genetic ; Multifactorial Inheritance/genetics ; Mutation/*genetics ; Phenotype ; Poisson Distribution ; Protein Interaction Maps ; Transcription Factors/*geneticsPublished by: -
4Latest Papers from Table of Contents or Articles in PressStaff View
Publication Date: 2018-06-05Publisher: BMJ PublishingElectronic ISSN: 2044-6055Topics: MedicineKeywords: Open access, Renal medicinePublished by: -
5Latest Papers from Table of Contents or Articles in PressH. H. Huang ; F. C. Lin ; B. Schmandt ; J. Farrell ; R. B. Smith ; V. C. Tsai
American Association for the Advancement of Science (AAAS)
Published 2015Staff ViewPublication Date: 2015-04-25Publisher: American Association for the Advancement of Science (AAAS)Print ISSN: 0036-8075Electronic ISSN: 1095-9203Topics: BiologyChemistry and PharmacologyComputer ScienceMedicineNatural Sciences in GeneralPhysicsPublished by: -
6Latest Papers from Table of Contents or Articles in PressStaff View
Publication Date: 2018-05-11Publisher: American Association for the Advancement of Science (AAAS)Print ISSN: 0036-8075Electronic ISSN: 1095-9203Topics: BiologyChemistry and PharmacologyGeosciencesComputer ScienceMedicineNatural Sciences in GeneralPhysicsKeywords: Epidemiology, GeneticsPublished by: -
7Articles: DFG German National LicensesYu, Chang-Chin ; Chu, C. F. ; Tsai, J. Y. ; Lin, C. F. ; Wang, S. C.
[S.l.] : American Institute of Physics (AIP)
Published 2002Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: We investigated the electrical and optical characteristics of beryllium implanted Mg-doped GaN materials. The Mg-doped GaN samples were grown by metalorganic chemical vapor deposition system and implanted with Be ions at two different energies of 50 and 150 keV and two different doses of about 1013 and 1014 cm−2. The implanted samples were subsequently rapidly thermal annealed at 900, 1000, and 1100 °C for various periods. The annealed samples showed an increase of hole concentration by three orders of magnitude from nonimplanted value of 5.5×1016 to 8.1×1019 cm−3 as obtained by Hall measurement. The high hole concentration samples also showed low specific resistance ohmic contact of about 10−3 Ω cm2 and 10−6 Ω cm2 using Ni/Au and Ni/Pd/Au metallization, respectively, without any further annealing process. It is also found from the temperature dependent photoluminescence that the activation energy of Mg dopants of the Be implanted samples has an estimated value of about 170 meV, which is nearly 30% lower than the as-grown samples of about 250 meV. The crystal quality and surface morphology of the Be implanted samples measured by x-ray diffraction and atomic force microscopy show no obvious degradation in the crystal quality and surface morphology. © 2002 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
8Articles: DFG German National LicensesStaff View
ISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: The Mg acceptors of GaN films are activated as p-type GaN with rapid thermal annealing (RTA) and furnace treatments. The GaN:Mg films are activated successfully by using the RTA system below 1000 °C for 1 min. After the RTA treatment, we observed a sharper linewidth and stronger emission intensities from donor to acceptor peaks in the photoluminescence spectra. By comparing the electrical properties of GaN:Mg films at optimum conditions made with RTA (800 °C) and furnace (700 °C) treatments, we find similar activated hole concentration and a higher hole mobility for GaN:Mg films with RTA treatment at 800 °C. A higher bulk resistivity caused by increasing nitrogen vacancies is found at higher temperature and longer time RTA treatments. Faster treatment times and lower temperatures for the GaN:Mg films were achieved with the RTA activation process. © 2000 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
9Articles: DFG German National LicensesLin, C. F. ; Cheng, H. C. ; Huang, J. A.
Woodbury, NY : American Institute of Physics (AIP)
Published 1997Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: In this letter, we report the observation of the enhanced electron mobility in three different Al0.08Ga0.92N/GaN heterostructures. These structures were deposited on (0001) 6H-SiC substrates by using the low-pressure metalorganic chemical vapor deposition method. The structure was composed of 500 Å AlGaN compositional stair-step layer deposited onto 1.3 μm GaN epitaxial layer. There is a 100 Å GaN Cap layer on top of the AlGaN layer to prevent the oxidation of the AlGaN layer. By using the van der Pauw method of Hall measurement, the sheet carrier density and mobility for Al0.08Ga0.92N/GaN heterostructure are 6.6×1012 cm-2 and 5413 cm2/Vs at 77 K, respectively. This high value of mobility is, to the best of our knowledge, the first observed two-dimensional electron gas (2DEG) at the AlGaN/GaN stair-step type of heterostructure. Other interface structures such as graded composition and bulk composition structures were also prepared and 2DEG properties were observed. © 1997 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
10Articles: DFG German National LicensesLin, C. -F. ; Ingerly, D. B. ; Chang, Y. A.
Woodbury, NY : American Institute of Physics (AIP)
Published 1996Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: PdIn was used as a contact material to n-type and p-type GaP. On n-type GaP it forms a low resistance ohmic contact upon rapid thermal annealing. PdIn/n-GaP (S doped at 2–3 ×1018 cm−3) contacts annealed at 600 °C for 1 min had specific contact resistance's lower than 1×10−4 Ω cm2. Unlike the contacts to n-GaP, PdIn contacts to p-GaP (Zn doped 1–2×1018 cm−3) show rectifying behavior at all annealing conditions. However, the effective Schottky barrier height seems to decrease significantly with thermal annealing. In addition to the electrical measurements, glancing angle x-ray diffraction was used to characterize the contacts. The glancing angle x-ray diffusion pattern of PdIn/n-GaP, annealed at 600 °C for 1 min, is consistent with the formation of an (InyGa1−y)P phase due to the thermal annealing. The ohmic behavior of the PdIn contacts to n-type GaP and the decrease in the contact's Schottky barrier height on p-type GaP is attributed to the formation of this (InyGa1−y)P phase at the contact's interface. © 1996 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
11Articles: DFG German National LicensesStaff View
ISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: High quality GaN epitaxial layers were grown on 6H–SiC substrates by using low-pressure metalorganic chemical vapor deposition method. Samples employing a three-period GaN/Al0.08Ga0.92N (100 Å/100 Å) as a buffer layer produce a good quality GaN epitaxial layer, with mobility and carrier concentration of 612 cm2/V⋅s and 1.3×1017 cm−3 (at 300 K), respectively. The enhanced electron mobility in the Al0.08Ga0.92N/GaN heterostructures is also observed. By using the van der Pauw method of Hall measurement, the sheet carrier density and mobility at 4.2 K for the Al0.08Ga0.92N/GaN heterostructure are 5.8×1012 cm−2 and 5300 cm2/V⋅s, respectively. Strong SdH (Shubnikov–de Haas) oscillations were observed to confirm the two-dimensional electron gas (2DEG) phenomenon at the AlGaN/GaN top heterointerface. In addition, an extra SdH oscillation also resulted from the high-quality 2DEG channel of the GaN/AlGaN bottom heterointerface. © 1997 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
12Articles: DFG German National LicensesSchremer, A. ; Fujita, T. ; Lin, C. F. ; Tang, C. L.
Woodbury, NY : American Institute of Physics (AIP)
Published 1988Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: The relationship between the modulation frequency and maximum modulation depth for stable and low-noise oscillation in external-cavity semiconductor lasers is investigated. Sharp resonances in the threshold for the onset of instability occur when the laser is nearly synchronously modulated. A physical model is proposed to explain these observations.Type of Medium: Electronic ResourceURL: -
13Articles: DFG German National LicensesStaff View
ISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: We report the generation of extremely short pulses using a superluminescent diode with a monolithically integrated absorber in an external cavity coupled to an additional empty cavity. The pulses obtained have an autocorrelation width of 1.8–2.6 ps without pulse compression. After pulse compression external to the coupled cavity, the pulse width is further reduced to as short as approximately 190 fs. The short pulses are obtained by careful adjustment of the length of the auxiliary cavity to match that of the main cavity.Type of Medium: Electronic ResourceURL: -
14Articles: DFG German National LicensesStaff View
ISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: Colliding pulse mode locking of a semiconductor laser is achieved by monolithically integrating an absorber in the center of a laser diode structure with chemically assisted ion beam etched angled facets in an external ring cavity. Minimum deconvolved pulses as short as 1.6 ps before compression and near-transform-limited pulses of 0.35 ps after compression are measured.Type of Medium: Electronic ResourceURL: -
15Articles: DFG German National LicensesLin, C.-F. ; Chang, Y. A. ; Pan, N. ; Huang, J.-W. ; Kuech, T. F.
Woodbury, NY : American Institute of Physics (AIP)
Published 1995Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: β-PdAl was studied as a Schottky contact to metalorganic chemical vapor deposition grown In0.52Al0.48As. Intermetallic alloy β-PdAl was chosen in order to utilize the Al–In exchange reaction which may occur between PdAl and In0.52Al0.48As, which would result in an enhanced Schottky barrier height. I–V, C–V, and deep level transient spectroscopy (DLTS) were used to determine the contact characteristics. The contact barrier height (φb) was measured by I–V and C–V methods after different annealing conditions, and good agreement between I–V and C–V results were obtained. The largest φb value is 0.67 eV from I–V measurement (0.69 eV from C–V) after the diode was annealed at 450 °C for 1 min. DLTS measurements were carried out to examine the effect of deep traps in the In0.52Al0.48As layer. Two deep levels were found, but the concentrations are lower than the intrinsic donor concentration obtained from the Hall method. The activation energies for these two deep levels obtained from an Arrhenius plot are 0.38 and 0.65 eV, respectively. © 1995 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
16Articles: DFG German National LicensesMohney, S. E. ; Lin, C. F. ; Chang, Y. A.
Woodbury, NY : American Institute of Physics (AIP)
Published 1993Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: Phase formation in the Pd/GaP system is examined by transmission electron microscopy, Auger depth profiling, and x-ray diffraction of Pd films on (100) GaP, and by x-ray diffraction of bulk phase equilibria samples. The reaction of Pd films with GaP is initiated with the formation of an oriented hexagonal ternary phase, Pd2(GaxP1−x). Another hexagonal ternary phase, Pd12( GaxP1−x)7, forms in the intermediate stages of the reaction, and PdGa and PdP2 are found to be in thermodynamic equilibrium with GaP. The Pd/GaP system is very similar to Pd/GaAs.Type of Medium: Electronic ResourceURL: -
17Articles: DFG German National LicensesLin, C. F. ; Chi, G. C. ; Feng, M. S. ; Guo, J. D. ; Tsang, J. S. ; Hong, J. Minghuang
Woodbury, NY : American Institute of Physics (AIP)
Published 1996Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: The GaN buffer layer was grown on the sapphire substrate by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) at 525 °C. The following 1.3 μm epitaxial GaN growth was carried out at 1025 °C. We varied the ramping rate from 12.5 to 100 °C/min to study the quality of the epitaxial GaN. It has been found that the x-ray peak width, photoluminescence (PL) linewidth, Hall mobilities, and carrier concentrations of GaN epitaxial layer strongly depend on the in situ thermal ramping rate. An optimum thermal ramping rate was found to be of 20 °C/min. The maximum mobility is 435 cm2/V s at carrier concentration of 1.7×1017 cm−3. The minimum full width at half maximum (FWHM) of x ray and PL were 5.5 min and 12 meV occur at a ramping rate of 20 °C/min. The decrease of the mobility at high and low ramping rate can be attributed to the thermal stress and the reevaporation of the GaN buffer layer. © 1996 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
18Articles: DFG German National LicensesX-ray crystallographic study of GaN epitaxial films on Al2O3(0001) substrates with GaN buffer layersLee, Chih-Hao ; Chi, G. C. ; Lin, C. F. ; Feng, M. S. ; Guo, J. D.
Woodbury, NY : American Institute of Physics (AIP)
Published 1996Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: Samples of GaN(0001) epitaxial films on sapphire Al2O3(0001) with different thicknesses of GaN buffer layers were characterized by x-ray diffraction method in both in-plane and plane-normal directions. The results show that all the epitaxial films are of good quality with the GaN[101¯0] (parallel)Al2O3[112¯0] and GaN[12¯10](parallel)Al2O3[11¯00]. This arrangement of crystal orientation can be attributed to the chemical potential overriding the lattice spacing mismatch. The x-ray results also indicate that the crystal coherence lengths in the in-plane direction are smaller than those measured in the plane-normal direction, i.e., a columnar-like structure normal to the film is observed. The rocking curve widths in the in-plane direction are also larger than those measured in the plane-normal direction. In-plane measurement of rocking curve and coherence length are essential physical quantities directly related to the electron mobility which was measured predominantly in the in-plane direction. The best epitaxial structure is the one grown with 10 nm buffer layer. © 1996 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
19Articles: DFG German National LicensesStaff View
ISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: In this letter, we investigate a metalization process for reducing the contact resistance on undoped GaN layers. The Si metal source was diffused successfully into the GaN films by using SiOx/Si/GaN/Al2O3 structures. By using a high-temperature annealing process, we diffused and activated the Si atoms into the GaN film. This caused a heavy doped n-type GaN layer to be formed near the GaN surface. Under high temperatures, such as a diffusion process at 1000 °C, the as-deposited Ni/Al/Ti contact had good ohmic properties and a low specific contact resistivity (ρc) of 1.6×10−3 Ω cm2. Rapid thermal annealing the contact at 800 °C for 30 s caused the ρc to decrease rapidly to 5.6×10−7 Ω cm2. The Ni/Al/Ti contact characteristics on the GaN films diffused at various temperatures are also discussed. © 2000 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
20Articles: DFG German National LicensesLin, C. F. ; Mohney, S. E. ; Chang, Y. A.
[S.l.] : American Institute of Physics (AIP)
Published 1993Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: X-ray diffraction and electron probe microanalysis were used to determine the phase equilibria in the In-Pt-P system at 725 and 600 °C. The observed binary phases were consistent with the assessed phase diagrams from the literature. Three ternary phases were found. The major difference between the 725 and 600 °C isotherms was the phases in equilibrium with InP. At 600 °C, the binary phases Pt3In7 and PtP2 were in equilibrium with InP. However, a tie-line transition from InP-Pt3In7 to In-PtP2 was found between 600 and 725 °C. The binary phases which were found to be stable in thin film form on InP were consistent with the phase equilibria data. From the tie-line change, the enthalpy of formation of PtP2 at 298 K was estimated to be −350±40 kJ/mol.Type of Medium: Electronic ResourceURL: