Search Results - (Author, Cooperation:B. Robinson)
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1Latest Papers from Table of Contents or Articles in PressStaff View
Publication Date: 2018-01-31Publisher: Wiley-BlackwellPrint ISSN: 0001-1541Electronic ISSN: 1547-5905Topics: Chemistry and PharmacologyProcess Engineering, Biotechnology, Nutrition TechnologyPublished by: -
2Latest Papers from Table of Contents or Articles in PressStaff View
Publication Date: 2018-03-29Publisher: BMJ PublishingElectronic ISSN: 2044-6055Topics: MedicineKeywords: Open access, Cardiovascular medicinePublished by: -
3Latest Papers from Table of Contents or Articles in PressTucci, S., Vohr, S. H., McCoy, R. C., Vernot, B., Robinson, M. R., Barbieri, C., Nelson, B. J., Fu, W., Purnomo, G. A., Sudoyo, H., Eichler, E. E., Barbujani, G., Visscher, P. M., Akey, J. M., Green, R. E.
American Association for the Advancement of Science (AAAS)
Published 2018Staff ViewPublication Date: 2018-08-03Publisher: American Association for the Advancement of Science (AAAS)Print ISSN: 0036-8075Electronic ISSN: 1095-9203Topics: BiologyChemistry and PharmacologyGeosciencesComputer ScienceMedicineNatural Sciences in GeneralPhysicsKeywords: Evolution, GeneticsPublished by: -
4Latest Papers from Table of Contents or Articles in PressGenetic risk for schizophrenia and autism, social impairment and developmental pathways to psychosisStaff View
Publication Date: 2018-09-27Publisher: Nature Publishing Group (NPG)Electronic ISSN: 2158-3188Topics: MedicinePublished by: -
5Latest Papers from Table of Contents or Articles in PressY. Li ; C. Schwab ; S. L. Ryan ; E. Papaemmanuil ; H. M. Robinson ; P. Jacobs ; A. V. Moorman ; S. Dyer ; J. Borrow ; M. Griffiths ; N. A. Heerema ; A. J. Carroll ; P. Talley ; N. Bown ; N. Telford ; F. M. Ross ; L. Gaunt ; R. J. McNally ; B. D. Young ; P. Sinclair ; V. Rand ; M. R. Teixeira ; O. Joseph ; B. Robinson ; M. Maddison ; N. Dastugue ; P. Vandenberghe ; C. Haferlach ; P. J. Stephens ; J. Cheng ; P. Van Loo ; M. R. Stratton ; P. J. Campbell ; C. J. Harrison
Nature Publishing Group (NPG)
Published 2014Staff ViewPublication Date: 2014-03-29Publisher: Nature Publishing Group (NPG)Print ISSN: 0028-0836Electronic ISSN: 1476-4687Topics: BiologyChemistry and PharmacologyMedicineNatural Sciences in GeneralPhysicsKeywords: Chromatids/genetics ; *Chromosome Aberrations ; Chromosome Breakage ; Chromosomes, Human, Pair 15/genetics ; Chromosomes, Human, Pair 21/*genetics ; DNA Copy Number Variations/genetics ; Humans ; Precursor Cell Lymphoblastic Leukemia-Lymphoma/*genetics ; Recombination, Genetic/genetics ; Translocation, Genetic/geneticsPublished by: -
6Latest Papers from Table of Contents or Articles in PressS. Behjati ; M. Huch ; R. van Boxtel ; W. Karthaus ; D. C. Wedge ; A. U. Tamuri ; I. Martincorena ; M. Petljak ; L. B. Alexandrov ; G. Gundem ; P. S. Tarpey ; S. Roerink ; J. Blokker ; M. Maddison ; L. Mudie ; B. Robinson ; S. Nik-Zainal ; P. Campbell ; N. Goldman ; M. van de Wetering ; E. Cuppen ; H. Clevers ; M. R. Stratton
Nature Publishing Group (NPG)
Published 2014Staff ViewPublication Date: 2014-07-22Publisher: Nature Publishing Group (NPG)Print ISSN: 0028-0836Electronic ISSN: 1476-4687Topics: BiologyChemistry and PharmacologyMedicineNatural Sciences in GeneralPhysicsKeywords: Animals ; Biological Clocks/genetics ; Cell Division ; Cell Lineage/*genetics ; Cells, Cultured ; Clone Cells/*cytology/*metabolism ; Embryo, Mammalian/cytology ; Genome/*genetics ; Humans ; Male ; Mice ; Mice, Inbred C57BL ; Mutagenesis/*genetics ; Mutation/*genetics ; Mutation Rate ; Organoids/cytology/metabolism ; Phylogeny ; Sequence Analysis, DNA ; Tail/cytologyPublished by: -
7Latest Papers from Table of Contents or Articles in PressRebecca Shafee; Pranav Nanda; Jaya L. Padmanabhan; Neeraj Tandon; Ney Alliey-Rodriguez; Sreeja Kalapurakkel; Daniel J. Weiner; Raquel E. Gur; Richard S. E. Keefe; Scot K. Hill; Jeffrey R. Bishop; Brett A. Clementz; Carol A. Tamminga; Elliot S. Gershon; Godfrey D. Pearlson; Matcheri S. Keshavan; John A. Sweeney; Steven A. McCarroll; Elise B. Robinson
Nature Publishing Group (NPG)
Published 2018Staff ViewPublication Date: 2018-04-12Publisher: Nature Publishing Group (NPG)Electronic ISSN: 2158-3188Topics: MedicinePublished by: -
8Latest Papers from Table of Contents or Articles in PressNatasha Lucas, Andrew B. Robinson, Maiken Marcker Espersen, Sadia Mahboob, Dylan Xavier, Jing Xue, Rosemary L. Balleine, Anna de; Fazio, Peter G. Hains, Phillip J. Robinson
American Chemical Society (ACS)
Published 2018Staff ViewPublication Date: 2018-11-29Publisher: American Chemical Society (ACS)Print ISSN: 1535-3893Electronic ISSN: 1535-3907Topics: Chemistry and PharmacologyPublished by: -
9Latest Papers from Table of Contents or Articles in PressVetterli, S. U., Zerbe, K., Müller, M., Urfer, M., Mondal, M., Wang, S.-Y., Moehle, K., Zerbe, O., Vitale, A., Pessi, G., Eberl, L., Wollscheid, B., Robinson, J. A.
American Association for the Advancement of Science (AAAS)
Published 2018Staff ViewPublication Date: 2018-11-15Publisher: American Association for the Advancement of Science (AAAS)Electronic ISSN: 2375-2548Topics: Natural Sciences in GeneralPublished by: -
10Articles: DFG German National LicensesHartstein, A. ; Albert, N. F. ; Bright, A. A. ; Kaplan, S. B. ; Robinson, B. ; Tornello, J. A.
[S.l.] : American Institute of Physics (AIP)
Published 1990Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: We have fabricated a Si metal-oxide-semiconductor field-effect transistor with a 20-nm channel length using a novel step/edge technique. An Al gate is evaporated onto a step in the SiO2 gate oxide. A second Al gate, separated from the first by a plasma-enhanced chemical-vapor-deposited SiO2 layer, provides inversion layer extensions of the source and drain contacts. Electrical conductance measurements indicate a channel length approximately equal to the fabricated gate length.Type of Medium: Electronic ResourceURL: -
11Articles: DFG German National LicensesRobinson, B. H. ; Slutsky, L. J. ; Auteri, F. P.
College Park, Md. : American Institute of Physics (AIP)
Published 1992Staff ViewISSN: 1089-7690Source: AIP Digital ArchiveTopics: PhysicsChemistry and PharmacologyNotes: A method is developed for the direct simulation of continuous wave electron paramagentic resonance (CW-EPR) line shapes from molecular trajectories. The method is applied to the cases of an axially symmetric nitroxide spin label undergoing two different types of motion (i) two-site jumping motion and (ii) isotropic rotational Brownian motion. Probabilistic models are developed that generate trajectories stable for large numbers of evolution time steps. Spectra at both 10 (X band) and 35 (Q band) GHz of satisfactory quality are generated from 40 trajectories of 214 steps sampled at 0.05 ns intervals. The resulting calculations illustrate that this method can be used as a basis of CW-EPR spectral simulation for systems undergoing arbitrarily complex dynamics using trajectories generated by classical Brownian dynamics.Type of Medium: Electronic ResourceURL: -
12Articles: DFG German National LicensesLakshmi, B. ; Cassidy, Daniel T. ; Robinson, B. J.
[S.l.] : American Institute of Physics (AIP)
Published 1996Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: InGaAsP/InP single quantum wells grown by gas-source molecular-beam epitaxy have been characterized for their strain and thickness using degree of polarization (DOP) of the edge emission photoluminescence at room temperature. The DOP is a measure of the relative strengths of TE- and TM-polarized e–hh and e–lh transitions. The value of the DOP increases with a decrease in thickness of the well and as the strain varies from tension to compression. For example, we observe a variation of DOP from 20% to 79% when the strain varies from 1% tension to 1% compression for a 30 A(ring) layer and from 27% to 62% when the thickness of a lattice-matched well is varied from 100 to 30 A(ring). A simple theoretical model is used to predict this trend. We show that this technique provides a sensitive measure of the variations in the strain and thickness of quantum wells. © 1996 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
13Articles: DFG German National LicensesHofstra, P. G. ; Thompson, D. A. ; Robinson, B. J. ; Besland, M. P. ; Gendry, M. ; Regreny, P. ; Hollinger, G.
[S.l.] : American Institute of Physics (AIP)
Published 1995Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: The thermal desorption of ultraviolet-ozone oxide on InP substrates prepared for molecular-beam epitaxy has been performed with overpressures of P2, As2, and As4. Surface analysis using reflection high-energy electron diffraction, Auger electron spectroscopy, and x-ray photoelectron spectroscopy and thermodynamic calculations indicate that thermal desorption proceeds via a reaction between the oxide and atomic phosphorus from the substrate to produce volatile phosphorus oxides such as P2O3. The overpressure species serves to stabilize the substrate against surface dissociation once the oxide is removed. In the case of an arsenic overpressure the desorption of the final monolayer of oxide is slowed, relative to the case of phosphorus overpressure, due to the formation of InAs. © 1995 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
14Articles: DFG German National LicensesLaPierre, R. R. ; Robinson, B. J. ; Thompson, D. A.
[S.l.] : American Institute of Physics (AIP)
Published 1996Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: The incorporation of the group V components in In1−xGaxAsyP1−y, grown lattice matched to InP by gas source molecular beam epitaxy, has been studied over the entire alloy range, 0≤y≤1, as a function of the group V source composition, the V/III beam flux ratio, and the substrate surface orientation. Several aspects of the group V incorporation are most easily understood in terms of a simple model involving a constant incorporation coefficient and an As "underpressure'' condition. An improved description of the results at lower values of the V/III flux ratio is provided by a thermodynamic model based on equilibrium reactions for the formation of the binary constituents, and using the bulk properties of the solid solution. However, the thermodynamic model is quantitatively incorrect for large values of the V/III flux ratio. Furthermore, the results for different surface orientations reveal additional weaknesses in the thermodynamic model and suggest the need to account for the surface bonding configurations in describing the group V incorporation in epitaxial growth. © 1996 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
15Articles: DFG German National LicensesFerret, P. ; Robinson, B. J. ; Thompson, D. A. ; Baribeau, J.-M.
Woodbury, NY : American Institute of Physics (AIP)
Published 1990Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: Misfit dislocations in the SiGe system are usually not dissociated. We present the first observation of a Lomer–Cottrell lock array in a Si/Si1−xGex/Si heterostructure (0.4〈x〈0.6). We describe the character of the stacking faults and the partial dislocations which form the locks.Type of Medium: Electronic ResourceURL: -
16Articles: DFG German National LicensesLakshmi, B. ; Robinson, B. J. ; Cassidy, Daniel T. ; Thompson, D. A.
[S.l.] : American Institute of Physics (AIP)
Published 1997Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: Room-temperature, polarization-resolved photoluminescence from a (001) surface has been used to investigate InP/InGaAs/InP quantum wells grown by gas source molecular beam epitaxy. The degree of polarization of photoluminescence from a (001) surface, DOP001, is a direct measure of the anisotropy of polarization of luminescence between [110] and [11¯ 0] directions. DOP001 is observed to be strongly dependent on the quantum well thickness, composition (strain), and the gas switching time at the growth-interrupted interface. Results show that the anisotropy of polarization may be due to an effect of an anisotropic strain field that is associated with strained bonds at the interfaces of the quantum well. © 1997 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
17Articles: DFG German National LicensesChilton, B. T. ; Robinson, B. J. ; Thompson, D. A. ; Jackman, T. E. ; Baribeau, J.-M.
Woodbury, NY : American Institute of Physics (AIP)
Published 1989Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: Strained-layer structures consisting of ∼30–35 nm Si1−xGex (x=0.16–0.29) and 33 nm Si deposited by molecular beam epitaxy on a (100)Si substrate have been amorphized by ion implantation at 40 K with 120 keV As+. Rutherford backscattering/channeling measurements using 2 MeV He+ ions have been used to measure the thickness of the amorphous layer and monitor the subsequent epitaxial regrowth occurring as a result of annealing at 560–600 °C. Angular scans across the {110} planar channels indicate that the initial crystallinity and strain was recovered for x=0.16; however, for x=0.29 crystal quality was greatly reduced and the coherency at the substrate-alloy layer interface was destroyed.Type of Medium: Electronic ResourceURL: -
18Articles: DFG German National LicensesWarren, W. L. ; Lenahan, P. M. ; Robinson, B. ; Stathis, J. H.
Woodbury, NY : American Institute of Physics (AIP)
Published 1988Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: We have utilized electron spin resonance and capacitance versus voltage measurements to study E' centers generated by the photoemission of electrons into silicon dioxide films prepared by plasma-enhanced chemical vapor deposition (PECVD). The oxides were deposited on crystalline silicon substrates downstream from a microwave discharge. The E' center is an unpaired electron in a nonbonding sp3 hybrid orbital on a silicon bonded to three oxygen atoms. In conventional thermal SiO2 films on silicon, E' centers are the dominant deep hole traps. However, the E' centers generated in the PECVD oxides are generated by electron injection into the oxide and are almost certainly electrically neutral. Our results unequivocally demonstrate fundamental differences in the point defects in thermally grown SiO2 on silicon and PECVD oxides.Type of Medium: Electronic ResourceURL: -
19Articles: DFG German National LicensesFreeouf, J. L. ; Buchanan, D. A. ; Wright, S. L. ; Jackson, T. N. ; Robinson, B.
Woodbury, NY : American Institute of Physics (AIP)
Published 1990Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: We have studied the properties of metal-oxide-semiconductor (MOS) structures fabricated by remote plasma-enhanced chemical vapor deposition of SiO2 upon GaAs substrates. For n-type GaAs, a silicon interlayer has been found to improve the interface properties. For our samples and this interlayer, integration of the quasi-static capacitance curve indicates a band-bending range of about 0.8 eV. For these samples, we observe a hysteresis of ∼0.6 V, and shifts of only 0.2 V in the midpoint of the rise from minimum to maximum capacitance upon changing frequency from 10 to 200 kHz at room temperature. Similar measurements for temperatures down to 80 K establish that even at such low temperatures an accumulation capacitance is observed. This sets an upper limit of about 70 meV for the separation between the interface Fermi level and the conduction-band minimum. This limit is a factor of two smaller than the best previously reported limit for approach to the conduction band of GaAs in a MOS structure. Spectroscopic ellipsometry establishes that nearly 2 A(ring) equivalent thickness of unoxidized silicon is at the SiO2/GaAs interface.Type of Medium: Electronic ResourceURL: -
20Articles: DFG German National LicensesLakshmi, B. ; Cassidy, Daniel T. ; Robinson, B. J.
[S.l.] : American Institute of Physics (AIP)
Published 1998Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: Numerical simulations based on a valence force field model have been performed to explain experimental results on the degree of polarization of photoluminescence from the [001] direction of InP/InGaAs/InP quantum wells grown on (001) substrates by gas-source molecular beam epitaxy. The results of the simulations indicate an anisotropic strain field owing to fundamental, growth-related differences between the interfaces of the quantum well. The anisotropic strain field is associated with strained Ga–P, Ga–As, and In–As bonds at the InP/InGaAs/InP interfaces. The results of the simulations are in agreement with measurements of the degree of polarization of photoluminescence from the [001] direction of the quantum wells. © 1998 American Institute of Physics.Type of Medium: Electronic ResourceURL: